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DIM600M1HS12-PC500

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DIM600M1HS12-PC500 Image

The DIM600M1HS12-PC500 from Dynex Semiconductor is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.85 V, DC Collector Current 600 A, Peak Collector Current 1200 A, DC Forward Current 600 A. More details for DIM600M1HS12-PC500 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DIM600M1HS12-PC500
  • Manufacturer
    Dynex Semiconductor
  • Description
    1200 V Half Bridge IGBT Module

General

  • Types
    Half Bridge IGBT View all
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    20 V
  • Dimensions
    152 x 62 mm
  • Saturated Collector Emitter Voltage
    1.85 V
  • DC Collector Current
    600 A
  • Peak Collector Current
    1200 A
  • DC Forward Current
    600 A
  • Gate Emitter Leakage Current
    0.5 µA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    3 kW
  • Package
    M1
  • Package Type
    Module View all
  • Applications
    Motor drives, power changing equipment, EV, inverters, renewable energy power conversion
  • Surge Current
    2800 A

Technical Documents
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