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2MBI1800XZF170-50 Image

The 2MBI1800XZF170-50 from Fuji Electric is a 2-Pack High Power IGBT Module. It has a collector-to-emitter voltage of up to 1700 V, a gate-emitter threshold voltage of 7 V, and a collector-to-emitter saturation voltage of 2.7 V. This IGBT has a collector current of 1800 A and a gate-emitter leakage current of less than 600 nA. It belongs to the seventh-generation family of X-series IGBT modules. This high-power IGBT module features low collector-emitter saturation voltage and a low inductance module structure. It is available as a module that measures 144 x 99 x 40 mm and is ideal for use in inverters for motor drives and AC and DC servo drives, UPS systems, wind turbines, and photovoltaic power conditioning systems.

Product Specifications

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Product Details

  • Part Number
    2MBI1800XZF170-50
  • Manufacturer
    Fuji Electric
  • Description
    1700 V 2-Pack IGBT Module

General

  • Types
    Dual Switch IGBT View all
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    ±20 V
  • Saturated Collector Emitter Voltage
    1.8 to 2.85 V
  • DC Collector Current
    1800 A
  • Peak Collector Current
    3600 A
  • DC Forward Current
    1800 A
  • Peak Forward Current
    3600 A
  • Junction Temperature
    175 Degree
  • Gate Emitter Leakage Current
    0.6 µA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    8600 W
  • Package Type
    Module View all
  • Industry
    Industrial, Commercial
  • Applications
    Inverter for Motor Drives, AC and DC Servo Drives, Uninterruptible Power Supply Systems, Wind Turbines, PV Power Conditioning Systems
  • RoHS Compliant
    Yes

Technical Documents

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