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4MBI340VF-120R-50

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4MBI340VF-120R-50 Image

The 4MBI340VF-120R-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.85 to 2.35 V, DC Collector Current 340 to 600 V, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for 4MBI340VF-120R-50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    4MBI340VF-120R-50
  • Manufacturer
    Fuji Electric
  • Description
    1200 V, Quad Channel IGBT Module

General

  • Types
    Quad Channel IGBT View all
  • No. of Transistors
    Quad
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.85 to 2.35 V
  • DC Collector Current
    340 to 600 V
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1500 W
  • Package
    M403
  • Package Type
    Module View all
  • Applications
    Inverter for Moter drives, Uniterruptible power supply, Power Conditioner
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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