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FD250R65KE3-K

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FD250R65KE3-K Image

The FD250R65KE3-K from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3 to 4.20 V, DC Collector Current 250 A, Peak Collector Current 500 A, DC Forward Current 250 A. More details for FD250R65KE3-K can be seen below.

Product Specifications

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Product Details

  • Part Number
    FD250R65KE3-K
  • Manufacturer
    Infineon Technologies
  • Description
    6500 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT View all
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3 to 4.20 V
  • DC Collector Current
    250 A
  • Peak Collector Current
    500 A
  • DC Forward Current
    250 A
  • Peak Forward Current
    500 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    6500 V
  • Power Dissipation
    1000000 W
  • Package
    A-IHV130
  • Package Type
    Chassis Mount View all
  • Applications
    Medium voltage converters, Traction drives
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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