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FS100R12W2T7

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FS100R12W2T7 Image

The FS100R12W2T7 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.50 to 1.72 V, DC Collector Current 100 A, Peak Collector Current 200 A, DC Forward Current 100 A. More details for FS100R12W2T7 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS100R12W2T7
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT View all
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.50 to 1.72 V
  • DC Collector Current
    100 A
  • Peak Collector Current
    200 A
  • DC Forward Current
    100 A
  • Peak Forward Current
    200 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    0.02 W
  • Package
    AG-EASY2B
  • Package Type
    Chassis Mount View all
  • Applications
    Auxiliary inverters, Air conditioning, Motor drives, Servo Drives, UPS systems
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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