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FS10R06VE3_B2

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FS10R06VE3_B2 Image

The FS10R06VE3_B2 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.55 to 2 V, DC Collector Current 10 A, Peak Collector Current 20 A, DC Forward Current 10 A. More details for FS10R06VE3_B2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS10R06VE3_B2
  • Manufacturer
    Infineon Technologies
  • Description
    600 V, Hex Channel IGBT Module

General

  • Types
    Hex Channel IGBT View all
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.55 to 2 V
  • DC Collector Current
    10 A
  • Peak Collector Current
    20 A
  • DC Forward Current
    10 A
  • Peak Forward Current
    20 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    50 W
  • Package
    AG-EASY750
  • Package Type
    Chassis Mount View all
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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