Note : Your request will be directed to Infineon Technologies.

FS200R07PE4 Image

The FS200R07PE4 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.55 to 1.95 V, DC Collector Current 200 A, Peak Collector Current 400 A, DC Forward Current 200 A. More details for FS200R07PE4 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FS200R07PE4
  • Manufacturer
    Infineon Technologies
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT View all
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.55 to 1.95 V
  • DC Collector Current
    200 A
  • Peak Collector Current
    400 A
  • DC Forward Current
    200 A
  • Peak Forward Current
    400 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    600 W
  • Package
    AG-ECONO4
  • Package Type
    Chassis Mount View all
  • Applications
    High Power converters, Motor Drives, UPS Systems
  • RoHS Compliant
    Yes

Technical Documents

Latest IGBTs

View more products