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IDC52D75H8DA Image

The IDC52D75H8DA from Infineon Technologies is an AEC-Q101-qualified IGBT. It can withstand a reverse voltage of up to 750 V and has a forward voltage of 1.45 V. This IGBT utilizes Infineon's EDT3 silicon IGBT technology to support soft and fast switching and has a low reverse recovery charge for improved efficiency. It has a small temperature coefficient and has improved commutation behaviour for reduced IGBT turn-on losses. This RoHS-compliant IGBT is available as a die that measures 9.50 x 5.44 mm and is suitable for automotive drive applications.

Product Specifications

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Product Details

  • Part Number
    IDC52D75H8DA
  • Manufacturer
    Infineon Technologies
  • Description
    750 V AEC-Q101 Qualified IGBT

General

  • Types
    Single Switch IGBT View all
  • No. of Transistors
    Single
  • Peak Collector Current
    960 A
  • DC Forward Current
    1.45 V
  • Peak Forward Current
    320 A
  • Operating Temperature
    -40 to 185 Degree C
  • Collector Emitter Voltage
    710 to 750 V
  • Package
    Die
  • Industry
    Industrial, Commercial, Automotive
  • RoHS Compliant
    Yes

Technical Documents

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