The IGC100T75H12RDYA from Infineon Technologies is an AEC-Q101-qualified IGBT. This IGBT has a reverse voltage of up to 750 V and a gate-emitter threshold voltage of up to 6.5 V. It has a continuous current of 320 A and a pulsed collector current of 960 A. This IGBT utilizes Infineon's EDT3 silicon IGBT technology to support fast switching and has a low switching loss. It has a positive temperature coefficient and consists of an integrated gate resistor. This RoHS-compliant IGBT is available as a die that measures 9.27 x 10.78 mm and is suitable for automotive drive applications.
