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IKP20N60T

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IKP20N60T Image

The IKP20N60T from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.05 to 2.05 V, DC Collector Current 28 to 41 A, DC Forward Current 28 to 41 A, Junction Temperature 175 Degree C. More details for IKP20N60T can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKP20N60T
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT View all
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.05 to 2.05 V
  • DC Collector Current
    28 to 41 A
  • DC Forward Current
    28 to 41 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    166 W
  • Package
    TO-220-3
  • Package Type
    Through Hole View all
  • RoHS Compliant
    Yes

Technical Documents
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