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MIW80N120BT1YHE3-BP Image

The MIW80N120BT1YHE3-BP from Micro Commercial Components is an Automotive-Grade Trench and Field Stop IGBT that has been designed to offer high-speed and smooth switching operation for hard and soft-switching applications. It has a collector-emitter breakdown voltage of over 1200 V, a gate threshold voltage of 5.05 V, and a collector-emitter saturation voltage of 2.3 V. This AEC-Q101-qualified IGBT has a continuous collector current of up to 160 A and a pulsed collector current of less than 240 A. It has a power dissipation of less than 521 W. This IGBT exhibits positive temperature coefficient characteristics for the collector-emitter saturation voltage curve and ensures good temperature stability and high ruggedness. It also complies with the UL 94 V-0 flammability standard for enhanced safety during operation. This RoHS-compliant IGBT is available in a through-hole package that measures 41.52 x 16.10 x 5.20 mm and is ideal for positive temperature coefficient (PTC) applications.

Product Specifications

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Product Details

  • Part Number
    MIW80N120BT1YHE3-BP
  • Manufacturer
    Micro Commercial Components
  • Description
    1200 V Automotive-Grade Trench and Field Stop IGBT

General

  • Types
    Field Stop Trench IGBT View all
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    ±20 V
  • Saturated Collector Emitter Voltage
    1.45 to 2.3 V
  • DC Collector Current
    80 to 160 A
  • Peak Collector Current
    240 A
  • Junction Temperature
    -40 to 150 Degree
  • Gate Emitter Leakage Current
    -0.1 to 0.1 µA
  • Operating Temperature
    -40 to 150 Degree
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    521 W
  • Package
    TO-247AB
  • Package Type
    Through Hole View all
  • Industry
    Industrial, Commercial
  • Applications
    PTC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes

Technical Documents

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