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APTGX300A120TDP3EG Image

The APTGX300A120TDP3EG from Microchip Technology is an IGBT Power Module. It has a collector-emitter voltage of up to 1200 V, a gate threshold voltage of 5.8 V, and a saturated collector-emitter voltage of up to 1.8 V. This low-profile IGBT has a continuous collector current of up to 300 A and a pulsed collector current of less than 600 A. It utilizes IGBT 7 technology that offers low-voltage drop and low-leakage current. This IGBT has a power dissipation of 1311 W and has a very low stray inductance of 20 nH. It incorporates an internal thermistor for temperature monitoring. This IGBT supports M6 power connectors and is fabricated using an Al2O3 substrate for improved thermal performance and has a copper baseplate. This RoHS-compliant IGBT is available as a module that measures 152 x 62 x 20.4 mm and is ideal for welding converters, switched-mode power supplies, uninterruptible power supplies, electric vehicle motors, and traction drive applications.

Product Specifications

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Product Details

  • Part Number
    APTGX300A120TDP3EG
  • Manufacturer
    Microchip Technology
  • Description
    1200 V IGBT Power Module

General

  • Types
    Dual Switch IGBT View all
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    ±20 V
  • Saturated Collector Emitter Voltage
    1.6 to 1.8 V
  • DC Collector Current
    300 A
  • Peak Collector Current
    600 A
  • DC Forward Current
    300 A
  • Junction Temperature
    -40 to 175 Degree
  • Gate Emitter Leakage Current
    0.15 µA
  • Operating Temperature
    -40 to 175 Degree
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1311 W
  • Package Type
    Module View all
  • Industry
    Industrial, Commercial
  • Applications
    Welding converters, Switched-mode power supplies, Uninterruptible power supplies, Electric Vehicle (EV) motor and traction drive
  • RoHS Compliant
    Yes
  • Note
    Trench 7 IGBT

Technical Documents

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