The APTGX600A170TDP3EG from Microchip Technology is an IGBT Power Module. It has a collector-emitter voltage of up to 1700 V, a gate threshold voltage of 5.15-6.45 V, and a saturated collector-emitter voltage of 1.7-2.1 V. This low-profile IGBT has a continuous collector current of up to 600 A and a pulsed collector current of less than 1200 A. It utilizes IGBT 7 technology that offers low-voltage drop and low-leakage current. This IGBT has a power dissipation of 2272 W and has a very low stray inductance of 20 nH. It incorporates an internal thermistor for temperature monitoring. This IGBT supports M6 power connectors and is fabricated using an Al2O3 substrate for improved thermal performance and has a copper baseplate. This RoHS-compliant IGBT is available as a module that measures 152 x 62 x 20.4 mm and is ideal for welding converters, switched-mode power supplies, uninterruptible power supplies, electric vehicle motors, and traction drive applications.