The APTGX900A170TDP3EG from Microchip Technology is a Phase Leg IGBT Power Module. It has a collector-emitter voltage of up to 1700 V, a gate threshold voltage of 5.15-6.45 V, and a saturated collector-emitter voltage of up to 2.1 V. This low-profile IGBT has a continuous collector current of up to 900 A and a pulsed collector current of less than 1800 A. It utilises IGBT 7 technology that offers low-voltage drop and low-leakage current. This IGBT has a power dissipation of 3260 W and has a very low stray inductance of 20 nH. It incorporates an internal thermistor for temperature monitoring. This IGBT supports M6 power connectors and is fabricated using an Al2O3 substrate for improved thermal performance and has a copper baseplate. This RoHS-compliant IGBT is available as a module that measures 152.0 x 62.0 x 20.4 mm and is ideal for welding converters, switched-mode power supplies, uninterruptible power supplies, electric vehicle motors, and traction drive applications.