The QIS4506013 from Powerex is a Single Non-isolated Discrete IGBT designed specifically for high voltage switching and pulse power applications. It has a collector-emitter voltage of up to 4500 V, a gate threshold voltage of less than 6.8 V, and a saturated collector-emitter voltage of 3.5 V. This IGBT has a collector current of 65 A and a total gate charge of 750 nC. It uses advanced Mitsubishi R-Series chip technology. This IGBT is designed for use either immersed in oil or with a conformal coating applied during assembly. It features a non-isolated molybdenum mounting plate and has a low drive requirement. This RoHS-compliant IGBT is available in a surface-mount package that measures 59.7 x 25 x 5.2 mm.