1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. STMicroelectronics
  6. STGW75H65DFB2-4

STGW75H65DFB2-4

Download Datasheet Request Quote

Note : Your request will be directed to STMicroelectronics.

STGW75H65DFB2-4 Image

The STGW75H65DFB2-4 from STMicroelectronics is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.8 V, DC Collector Current 71 to 115 A, DC Forward Current 65 to 110 A, Junction Temperature -55 to 175 Degree C. More details for STGW75H65DFB2-4 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    STGW75H65DFB2-4
  • Manufacturer
    STMicroelectronics
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT View all
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.8 V
  • DC Collector Current
    71 to 115 A
  • DC Forward Current
    65 to 110 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.25 to 0.25 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    357 W
  • Package
    TO247-4
  • Package Type
    Through Hole View all
  • Applications
    Welding, Power factor correction, UPS, Solar inverters, Chargers
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products