VS-50MT060PHTAPbF

IGBT by Vishay

Note : Your request will be directed to Vishay.

The VS-50MT060PHTAPbF from Vishay is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.41 V, DC Collector Current 50 A, DC Forward Current 34 to 200 A, Gate Emitter Leakage Current -0.25 to 0.25. More details for VS-50MT060PHTAPbF can be seen below.

Product Specifications

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Product Details

  • Part Number
    VS-50MT060PHTAPbF
  • Manufacturer
    Vishay
  • Description
    600 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.41 V
  • DC Collector Current
    50 A
  • DC Forward Current
    34 to 200 A
  • Gate Emitter Leakage Current
    -0.25 to 0.25
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    122 to 305 W
  • Applications
    Optimized for welding, UPS, SMPS

Technical Documents

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