VS-GT200TP065U

IGBT by Vishay

Note : Your request will be directed to Vishay.

The VS-GT200TP065U from Vishay is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.9 V, DC Collector Current 132 A, DC Forward Current 103 to 138 A, Gate Emitter Leakage Current 0.2 uA. More details for VS-GT200TP065U can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    VS-GT200TP065U
  • Manufacturer
    Vishay
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.9 V
  • DC Collector Current
    132 A
  • DC Forward Current
    103 to 138 A
  • Gate Emitter Leakage Current
    0.2 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    271 to 429 W
  • Applications
    UPS, welding

Technical Documents

Latest IGBTs

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.