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VS-GT75LA60UF

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VS-GT75LA60UF Image

The VS-GT75LA60UF from Vishay is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.79 V, DC Collector Current 61 A, DC Forward Current 75 to 113 A, Junction Temperature -40 to 175 Degree C. More details for VS-GT75LA60UF can be seen below.

Product Specifications

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Product Details

  • Part Number
    VS-GT75LA60UF
  • Manufacturer
    Vishay
  • Description
    600 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT View all
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.79 V
  • DC Collector Current
    61 A
  • DC Forward Current
    75 to 113 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.25 to 0.25
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    146 to 231 W
  • Package
    SOT-227
  • Package Type
    Surface Mount View all
  • Applications
    UPS, SMPS
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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