SDT4U40EP3

Note : Your request will be directed to Diodes Incorporated.

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The SDT4U40EP3 from Diodes Incorporated is a Trench Schottky Barrier Diode that is optimized for low forward voltage drop and low leakage current. It has a forward current of 4 A and a forward voltage of 0.55 V. This power diode has a repetitive peak reverse voltage of up to 40 V and a reverse current of up to 150 µA. It has a low forward voltage that minimizes conduction losses and improves efficiency. This AEC-Q100/101/200 qualified power diode has low heat resistance, which enables design challenges with increasing efficiency while reducing board space. It is available as a chip that measures 1.28 x 1.28 mm and is ideal for portable applications such as blocking diode, boost diode, switching diode and reverse protection diode.

Product Specifications

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Product Details

  • Part Number
    SDT4U40EP3
  • Manufacturer
    Diodes Incorporated
  • Description
    Trench Schottky Barrier Diode for Portable Applications

General

  • Types of Diode
    Schottky Barrier Diode
  • Configuration of Diode
    Single Diode
  • Technology
    Silicon
  • Forward Current
    4 A
  • Forward Voltage
    0.55 V
  • Reverse Current
    150 µA
  • Reverse Voltage
    40 V
  • Repetitive Peak Reverse Voltage
    40 V
  • Non-Repetitive Peak Forward Current
    28 A
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Temperature operating range
    -55 to 150 degree C
  • Applications
    Blocking diode, Boost diode, Reverse Protection Diode, Switching diode
  • Dimensions
    1.28 x 1.28 mm
  • Package Type
    Chip
  • Package
    X3-TSN1608-2

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