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IDB18E120

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IDB18E120 Image

The IDB18E120 from Infineon Technologies is a Power Diode with Forward Current 18 to 31 A, Forward Voltage 1.65 V, Repetitive Peak Reverse Voltage 1200 V, Non-Repetitive Peak Forward Current 78 A, Recovery Time 195 nS. Tags: Through Hole. More details for IDB18E120 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IDB18E120
  • Manufacturer
    Infineon Technologies
  • Description
    1700 V Emitter Controlled Silicon Diode

General

  • Types of Diode
    Silicon Diode View all
  • Configuration of Diode
    Single Diode View all
  • Forward Current
    18 to 31 A
  • Forward Voltage
    1.65 V
  • Repetitive Peak Reverse Voltage
    1200 V
  • Non-Repetitive Peak Forward Current
    78 A
  • Recovery Time
    195 nS
  • RoHS Compliant
    Yes View all
  • Temperature operating range
    -55 to 150 Degree C
  • Applications
    Motor control and drives
  • Package Type
    Through Hole View all
  • Package
    PG-TO263-3

Technical Documents
View details on the manufacturer's website
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