STPSC10H12D

Note : Your request will be directed to STMicroelectronics.

STPSC10H12D Image

The STPSC10H12D from STMicroelectronics is a Silicon Carbide Schottky Power Diode that is ideal for power factor correction (PFC), hard switching, and secondary side applications. It has a forward voltage of 1.35 V and a forward current of up to 10 A. This diode has a reverse current of 5 µA. It has a repetitive peak reverse voltage of up to 1200 V and a non-repetitive peak forward current of less than 38 A. The power diode exhibits no recovery during turn-off with negligible ringing patterns due to its unique Schottky-type construction.

This SiC diode offers minimal capacitive turn-off behavior that is independent of temperature and has been designed to boost performance under hard switching conditions. It enhances the performance of the targeted application and offers high forward surge capability that ensures robustness during transient phases. This RoHS-compliant Schottky diode is available in a through-hole package that measures 10.40 x 28.25 x 10.00 mm.

Product Specifications

View similar products

Product Details

  • Part Number
    STPSC10H12D
  • Manufacturer
    STMicroelectronics
  • Description
    1200 V SiC Schottky Power Diode for PFC Applications

General

  • Types of Diode
    Schottky Barrier Diode
  • Configuration of Diode
    Single Diode
  • Technology
    SiC
  • Forward Current
    10 A
  • Forward Voltage
    1.35 V
  • Reverse Current
    5 µA
  • Repetitive Peak Reverse Voltage
    1200 V
  • Non-Repetitive Peak Forward Current
    38 A
  • Industry
    Industrial
  • RoHS Compliant
    Yes
  • Temperature operating range
    -40 to 175 Degree C
  • Applications
    Switch mode power supply, PFC, DCDC Converters, LLC Topolgies
  • Dimensions
    10.40 x 28.25 x 10.00 mm
  • Package Type
    Through Hole
  • Package
    TO-220AC

Technical Documents