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Power Diodes from Manufacturers in Germany - Page 12

464 Power Diodes from 3 manufacturers meet your specification.
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464 Power Diodes from 3 Manufacturers
464 Products from 3 Manufacturers
Page 12 of 31
IDB30E120 Image
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Infineon Technologies - IDB30E120

Power Diode from Infineon Technologies
600 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Single Diode
Forward Current:
30 to 50 A
Forward Voltage:
1.65 V
Repetitive Peak Reverse Voltage:
1200 V
Non-Repetitive Peak Forward Current:
102 A
Recovery Time:
243 nS
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Applications:
Motor control and drives
Package:
PG-TO263-3
more info
IDV15E65D2 Image
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Infineon Technologies - IDV15E65D2

Power Diode from Infineon Technologies
1200 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Single Diode
Forward Current:
7.5 to 15 A
Forward Voltage:
1.6 V
Repetitive Peak Reverse Voltage:
650 V
Non-Repetitive Peak Forward Current:
100 A
Recovery Time:
47 nS
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
Boost diode in CCM PFC
Package:
PG-TO220-2
more info
IDP08E65D1 Image
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Infineon Technologies - IDP08E65D1

Power Diode from Infineon Technologies
650 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Single Diode
Forward Current:
8 to 16 A
Forward Voltage:
1.35 V
Repetitive Peak Reverse Voltage:
650 V
Non-Repetitive Peak Forward Current:
64 A
Recovery Time:
80 nS
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
AC/D Cconverters, Boost diode in PFC stages, Gener...
Package:
PG-TO220-2
more info
IDFW40E65D1E Image
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Infineon Technologies - IDFW40E65D1E

Power Diode from Infineon Technologies
1200 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Single Diode
Forward Current:
35 to 42 A
Forward Voltage:
1.7 to 2.1 V
Repetitive Peak Reverse Voltage:
650 V
Non-Repetitive Peak Forward Current:
120 A
Recovery Time:
76 nS
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
AirConditioning PFC, General Purpose Drives (GPD)
Package:
PG-HSIP247-3
more info
IDP20E65D2 Image
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Infineon Technologies - IDP20E65D2

Power Diode from Infineon Technologies
1200 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Single Diode
Forward Current:
20 to 40 A
Forward Voltage:
1.6 to 2.2 V
Repetitive Peak Reverse Voltage:
650 V
Non-Repetitive Peak Forward Current:
120 A
Recovery Time:
43 nS
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
Boost diode in CCM PFC
Package:
PG-TO220-2
more info
IDW30E60 Image
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Infineon Technologies - IDW30E60

Power Diode from Infineon Technologies
600 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Single Diode
Forward Current:
30 to 60 A
Forward Voltage:
1.65 V
Repetitive Peak Reverse Voltage:
600 V
Non-Repetitive Peak Forward Current:
150 A
Recovery Time:
143 nS
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
Switching diode for PFC
Package:
PG-TO247-3
more info
IDP20C65D2 Image
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Infineon Technologies - IDP20C65D2

Power Diode from Infineon Technologies
1700 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Dual Diode
Forward Current:
10 to 20 A
Forward Voltage:
1.6 to 2.2 V
Repetitive Peak Reverse Voltage:
650 V
Non-Repetitive Peak Forward Current:
60 A
Recovery Time:
50 nS
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
Boost diode in CCM PFC
Package:
PG-TO220-3
more info
IDP30E65D1 Image
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Infineon Technologies - IDP30E65D1

Power Diode from Infineon Technologies
1700 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Single Diode
Forward Current:
30 to 60 A
Forward Voltage:
1.35 to 1.7 V
Repetitive Peak Reverse Voltage:
650 V
Non-Repetitive Peak Forward Current:
180 A
Recovery Time:
95 nS
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
AC/D Cconverters, Boost diode in PFC stages, Gener...
Package:
PG-TO220-2
more info
IDP12E120 Image
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Infineon Technologies - IDP12E120

Power Diode from Infineon Technologies
1200 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Single Diode
Forward Current:
12 to 28 A
Forward Voltage:
1.65 V
Repetitive Peak Reverse Voltage:
1200 V
Non-Repetitive Peak Forward Current:
63 A
Recovery Time:
150 nS
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Applications:
Motor control and drives
Package:
PG-TO220-2
more info
IDP15E65D1 Image
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Infineon Technologies - IDP15E65D1

Power Diode from Infineon Technologies
1200 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Single Diode
Forward Current:
15 to 30 A
Forward Voltage:
1.35 V
Repetitive Peak Reverse Voltage:
650 V
Non-Repetitive Peak Forward Current:
120 A
Recovery Time:
114 nS
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
AC/D Cconverters, Boost diode in PFC stages, Gener...
Package:
PG-TO220-2
more info
IDP08E65D2 Image
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Infineon Technologies - IDP08E65D2

Power Diode from Infineon Technologies
1200 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Single Diode
Forward Current:
8 to 16 A
Forward Voltage:
1.6 V
Repetitive Peak Reverse Voltage:
650 V
Non-Repetitive Peak Forward Current:
60 A
Recovery Time:
40 nS
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
Boost diode in CCM PFC
Package:
PG-TO220-2
more info
IDP30E65D2 Image
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Infineon Technologies - IDP30E65D2

Power Diode from Infineon Technologies
1200 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Single Diode
Forward Current:
30 to 60 A
Forward Voltage:
1.6 to 2.2 V
Repetitive Peak Reverse Voltage:
650 V
Non-Repetitive Peak Forward Current:
180 A
Recovery Time:
70 nS
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
Boost diode in CCM PFC
Package:
PG-TO220-2
more info
IDW50E60 Image
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Infineon Technologies - IDW50E60

Power Diode from Infineon Technologies
1200 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Single Diode
Forward Current:
50 to 80 A
Forward Voltage:
1.65 V
Repetitive Peak Reverse Voltage:
600 V
Non-Repetitive Peak Forward Current:
240 A
Recovery Time:
115 nS
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
Switching diode for PFC
Package:
PG-TO247-3
more info
IDV30E65D2 Image
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Infineon Technologies - IDV30E65D2

Power Diode from Infineon Technologies
1200 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Single Diode
Forward Current:
17.5 to 30 A
Forward Voltage:
1.6 to 2.2 V
Repetitive Peak Reverse Voltage:
650 V
Non-Repetitive Peak Forward Current:
180 A
Recovery Time:
70 nS
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
Boost diode in CCM PFC
Package:
PG-TO220-2
more info
IDP30C65D2 Image
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Infineon Technologies - IDP30C65D2

Power Diode from Infineon Technologies
600 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Dual Diode
Forward Current:
15 to 30 A
Forward Voltage:
1.6 to 2.2 V
Repetitive Peak Reverse Voltage:
650 V
Non-Repetitive Peak Forward Current:
100 A
Recovery Time:
42 nS
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
Boost diode in CCM PFC
Package:
PG-TO220-3
more info
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