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Power Diodes from Manufacturers in Germany - Page 13

464 Power Diodes from 3 manufacturers meet your specification.
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464 Power Diodes from 3 Manufacturers
464 Products from 3 Manufacturers
Page 13 of 31
IDW60C65D1 Image
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Infineon Technologies - IDW60C65D1

Power Diode from Infineon Technologies
1200 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Dual Diode
Forward Current:
30 to 60 A
Forward Voltage:
1.35 to 1.7 V
Repetitive Peak Reverse Voltage:
650 V
Non-Repetitive Peak Forward Current:
240 A
Recovery Time:
115 nS
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
AC/D Cconverters, Boost diode in PFC stages, Gener...
Package:
PG-TO247-3
more info
IDP18E120 Image
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Infineon Technologies - IDP18E120

Power Diode from Infineon Technologies
650 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Single Diode
Forward Current:
18 to 31 A
Forward Voltage:
1.65 V
Repetitive Peak Reverse Voltage:
1200 V
Non-Repetitive Peak Forward Current:
78 A
Recovery Time:
195 nS
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Applications:
Motor control and drives
Package:
PG-TO220-2
more info
IDV20E65D1 Image
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Infineon Technologies - IDV20E65D1

Power Diode from Infineon Technologies
1200 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Single Diode
Forward Current:
15 to 28 A
Forward Voltage:
1.35 to 1.7 V
Repetitive Peak Reverse Voltage:
650 V
Non-Repetitive Peak Forward Current:
120 A
Recovery Time:
65 nS
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
AC/D Cconverters, Boost diode in PFC stages, Gener...
Package:
PG-TO220-2
more info
IDW75E60 Image
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Infineon Technologies - IDW75E60

Power Diode from Infineon Technologies
650 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Single Diode
Forward Current:
75 to 120 A
Forward Voltage:
1.65 V
Repetitive Peak Reverse Voltage:
600 V
Non-Repetitive Peak Forward Current:
220 A
Recovery Time:
121 nS
Temperature operating range:
-55 to 175 Degree C
RoHS Compliant:
Yes
Applications:
Welding, Motor drives
Package:
PG-TO247-3
more info
IDW30E65D1 Image
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Infineon Technologies - IDW30E65D1

Power Diode from Infineon Technologies
1200 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Single Diode
Forward Current:
30 to 60 A
Forward Voltage:
1.35 V
Repetitive Peak Reverse Voltage:
650 V
Non-Repetitive Peak Forward Current:
240 A
Recovery Time:
115 nS
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
AC/D Cconverters, Boost diode in PFC stages, Gener...
Package:
PG-TO247-3
more info
IDW30C65D1 Image
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Infineon Technologies - IDW30C65D1

Power Diode from Infineon Technologies
1200 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Dual Diode
Forward Current:
15 to 30 A
Forward Voltage:
1.35 to 1.7 V
Repetitive Peak Reverse Voltage:
650 V
Non-Repetitive Peak Forward Current:
120 A
Recovery Time:
114 nS
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
AC/D Cconverters, Boost diode in PFC stages, Gener...
Package:
PG-TO247-3
more info
IDW20C65D2 Image
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Infineon Technologies - IDW20C65D2

Power Diode from Infineon Technologies
1200 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Dual Diode
Forward Current:
10 to 20 A
Forward Voltage:
1.6 to 2.2 V
Repetitive Peak Reverse Voltage:
650 V
Non-Repetitive Peak Forward Current:
60 A
Recovery Time:
50 nS
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
Boost diode in CCM PFC
Package:
PG-TO247-3
more info
IDP15E65D2 Image
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Infineon Technologies - IDP15E65D2

Power Diode from Infineon Technologies
600 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Single Diode
Forward Current:
15 to 30 A
Forward Voltage:
1.6 V
Repetitive Peak Reverse Voltage:
650 V
Non-Repetitive Peak Forward Current:
100 A
Recovery Time:
47 nS
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
Boost diode in CCM PFC
Package:
PG-TO220-2
more info
IDW15E65D2 Image
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Infineon Technologies - IDW15E65D2

Power Diode from Infineon Technologies
1200 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Single Diode
Forward Current:
15 to 30 A
Forward Voltage:
1.6 V
Repetitive Peak Reverse Voltage:
650 V
Non-Repetitive Peak Forward Current:
100 A
Recovery Time:
47 nS
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
Boost diode in CCM PFC
Package:
PG-TO247-3
more info
IDW30C65D2 Image
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Infineon Technologies - IDW30C65D2

Power Diode from Infineon Technologies
1700 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Dual Diode
Forward Current:
15 to 30 A
Forward Voltage:
1.6 to 2.2 V
Repetitive Peak Reverse Voltage:
650 V
Non-Repetitive Peak Forward Current:
100 A
Recovery Time:
51 nS
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
Boost diode in CCM PFC
Package:
PG-TO247-3
more info
IDW40E65D2 Image
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Infineon Technologies - IDW40E65D2

Power Diode from Infineon Technologies
600 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Single Diode
Forward Current:
40 to 80 A
Forward Voltage:
1.6 V
Repetitive Peak Reverse Voltage:
650 V
Non-Repetitive Peak Forward Current:
320 A
Recovery Time:
75 nS
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
Boost diode in CCM PFC
Package:
PG-TO247-3
more info
IDP30E120 Image
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Infineon Technologies - IDP30E120

Power Diode from Infineon Technologies
650 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Single Diode
Forward Current:
30 to 50 A
Forward Voltage:
1.65 V
Repetitive Peak Reverse Voltage:
1200 V
Non-Repetitive Peak Forward Current:
102 A
Recovery Time:
243 nS
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Applications:
Motor control and drives
Package:
PG-TO220-2
more info
IDW75D65D1 Image
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Infineon Technologies - IDW75D65D1

Power Diode from Infineon Technologies
1700 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Dual Diode
Forward Current:
75 to 150 A
Forward Voltage:
1.35 to 1.7 V
Repetitive Peak Reverse Voltage:
650 V
Non-Repetitive Peak Forward Current:
580 A
Recovery Time:
127 nS
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
AC/D Cconverters, Boost diode in PFC stages, Gener...
Package:
PG-TO247-3
more info
IDV08E65D2 Image
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Infineon Technologies - IDV08E65D2

Power Diode from Infineon Technologies
600 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Single Diode
Forward Current:
4 to 8 A
Forward Voltage:
1.6 V
Repetitive Peak Reverse Voltage:
650 V
Non-Repetitive Peak Forward Current:
60 A
Recovery Time:
40 nS
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
Boost diode in CCM PFC
Package:
PG-TO220-2
more info
IDFW80C65D1 Image
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Infineon Technologies - IDFW80C65D1

Power Diode from Infineon Technologies
1200 V Emitter Controlled Silicon Diode

Product Specs

Types of Diode:
Silicon Diode
Configuration of Diode:
Dual Diode
Forward Current:
59 to 74 A
Forward Voltage:
1.45 to 1.7 V
Repetitive Peak Reverse Voltage:
650 V
Non-Repetitive Peak Forward Current:
320 A
Temperature operating range:
-40 to 175 Degree C
RoHS Compliant:
Yes
Applications:
Air Conditioning, General Purposev Drives, Industr...
Package:
PG-HSIP247-3
more info
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