Si, SiC or GaN? The right choice for power devices

The webinar discovers more about technological positioning of silicon versus SiC and GaN power devices for both high and low power applications.

  • The characteristics of latest silicon-based superjunction technology, SiC MOSFETs and GaN HEMTs.
  • The 600V/650V voltage classes where all three technologies co-exist.
  • Presented use cases e.g. telecom and servers.
  • Topologies and control schemes in which wide bandgap devices can be used in the most beneficial way in comparison to the next best silicon-based alternative.


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