Analyzing Super-Junction C-V to Estimate Charge Imbalance
Madhur Bobde, Lingpeng Guan, Anup Bhalla, Fei Wang, Moses Ho
In this paper, we present a new technique to model charge imbalance in Super Junction devices using junction (Drain-Source for MOSFET) C-V measurements. In contrast to Breakdown Voltage measurement that can also be used for this purpose, this technique offers significant advantages by having no dependence on the edge termination BV for its accuracy. In addition, this method can be used to estimate both the magnitude and polarity of charge imbalance.
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