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GaN, SiC And The Future Of Power Electronics For Artificial Intelligence Data Centers

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GaN, SiC And The Future Of Power Electronics For Artificial Intelligence Data Centers

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  • Author: EZEQUIEL NAVARRO
This whitepaper explores the role of wide-bandgap semiconductors—specifically GaN (Gallium Nitride), SiC (Silicon Carbide), and Ga₂O₃ (Gallium Oxide)—in enabling next-generation AI-driven data centers. It explains how rapidly increasing AI workloads are pushing power systems toward higher efficiency, power density, and improved thermal performance requirements. The document highlights how these advanced materials significantly improve power conversion efficiency and reduce energy losses in high-voltage architectures. It also discusses emerging data center trends such as 800V and HVDC power distribution systems. Overall, the paper emphasizes how next-gen semiconductor technologies are critical to scaling sustainable, high-performance AI infrastructure.
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