Navitas Semiconductor, an industry leader in next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, announced the launch of its new UHV-TO-247-4-ISO package, setting a new benchmark for high-performance discrete power devices.

Featuring over 12 mm pin-to-pin creepage and greater than 6000 V integrated isolation, the package is purpose-built for 1200 V to 3300 V GeneSiC SiC MOSFETs, delivering module-like performance in a compact discrete form factor. When compared with standard non-isolated through-hole packages, this package not only eliminates the need for external high-voltage isolation but also improves thermal and EMI performance. This expands Navitas’ packaging portfolio, including SiCPAK power modules, QDPAK, TO-247-LP, and other high-performance solutions, for more efficient, denser, scalable power systems in energy, grid, and AI data centers.

The UHV-TO-247-4-ISO package integrates an Aluminum Nitride (AlN) substrate to provide robust high-voltage isolation exceeding 6000 V, which eliminates the need for external isolation materials and simplifies system design. Its direct-cooled, reflow-compatible thermal pad allows direct mounting to liquid- or air-cooled heat sinks without external thermal interface material (TIM), reducing thermal resistance by up to 60% and increasing power dissipation capability by up to 150% while improving power density, reliability, manufacturability, and overall system cost. The integrated high-voltage isolation also reduces die-to-heatsink stray capacitance compared to external ceramic-based isolators, minimizing common-mode noise and radiated EMI to enable higher switching speeds, improved power density, increased system efficiency, and reduced EMI mitigation costs.

Built on the AlN substrate with active metal brazing (AMB) technology and a robust reflow-compatible heatsink interface, the package delivers superior power cycling capability and enhanced thermal cycling lifetime by eliminating external TIM and isolation materials from the system stack. Finally, the package maintains compatibility with the established high-voltage TO-247-4 form factor and lead geometry, allowing effortless system integration without redesign while delivering superior performance, increased reliability, and lower total system cost.

“High-power system design is fundamentally challenged by the need to balance efficient thermal management with robust high-voltage isolation,” said Paul Wheeler, VP & GM of the SiC Business Unit at Navitas. “The UHV-TO-247-4-ISO package overcomes critical thermal and isolation challenges, delivering power module–class performance in a compact discrete form factor. As a highly efficient building block, it empowers system designers to unlock the full potential of GeneSiC TAP SiC MOSFET technology in next-generation applications such as immersion-cooled and liquid-cooled power electronics.” The UHV-TO-247-4-ISO package is offered in 3300V, 2300V, and 1200V SiC MOSFET ratings. This packaging breakthrough enables performance improvements in high-voltage grid-tied power conversion systems (PCS), solid-state transformers (SST), battery energy storage systems (BESS), and renewable energy applications. The new package, together with its direct-cooled heatsink assembly, will be available at the Navitas Booth at PCIM Europe 2026, in Nuremberg, booth #544, Hall 9.

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