News for NoMIS Power

Richardson Partners with NoMIS Power to Expand High-Voltage SiC Power Solutions
- May 21, 2026
- NoMIS Power
Richardson Electronics announced a new global strategic partnership with NoMIS Power, a leading designer of advanced silicon carbide (SiC) power semiconductor technologies. Th... Read More
Tags:- Power Supplies, Industrial, Renewable Energy, Energy Storage, Semiconductor
NoMIS Power Joins ARPA-E DC-GRIDS for 3.3 kV SiC HVDC Technology
- May 18, 2026
- NoMIS Power
NoMIS Power, a leader in advanced Silicon Carbide (SiC) power semiconductor technology, announced its participation as an industry partner in a three-year, $2.5 million projec... Read More
Tags:- Renewable Energy, MOSFET, Sustainable Energy, Semiconductor
NoMIS Introduces Medium-Voltage SiC MOSFETs for Grid and HVDC Markets
- February 27, 2026
- NoMIS Power
NoMIS Power, a leader in advanced Silicon Carbide (SiC) power semiconductor technology, announced the commercial release of two medium-voltage SiC MOSFETs: NoMIS N3PT035MP330K... Read More
Tags:- Power Transistor, MOSFET, Semiconductor
NoMIS Power Unveils 1200 V SiC MOSFET for Next-Gen Power Electronics
- September 15, 2025
- NoMIS Power
NoMIS Power has announced the launch of the N3PT028MP120K, a cutting-edge 1200 V, 28 mO Silicon Carbide (SiC) MOSFET designed to meet the growing demand for high-efficiency an... Read More
Tags:- Silicon Carbide, MOSFET
NoMIS Power Introduces 3.3 kV Planar SiC MOSFET
- September 09, 2025
- NoMIS Power
NoMIS Power, a leader in advanced Silicon Carbide (SiC) power semiconductor technology, has announced the commercial release of its first 3.3 kV SiC MOSFET, the NoMIS N3PT080M... Read More
Tags:- Silicon Carbide, Industrial, Renewable Energy, MOSFET
NoMIS Power Unveils Advancements in SiC Planar MOSFETs
- May 06, 2025
- NoMIS Power
NoMIS Power has announced a key advancement in its next-generation 1.2 kV planar SiC MOSFET platform, achieving substantial reductions in on-resistance by optimizing device de... Read More
Tags:- SiC, MOSFET
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NoMIS Achieves Breakthrough in SiC MOSFET Short-Circuit Withstand Time
- March 17, 2025
- NoMIS Power
NoMIS Power, a leader in advanced silicon carbide (SiC) power semiconductor technology, has announced a major breakthrough in improving the short-circuit withstand time (SCWT)... Read More
Tags:- SiC, Power Transistor, MOSFET, Power Converters, Semiconductor

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News for NoMIS Power

Richardson Partners with NoMIS Power to Expand High-Voltage SiC Power Solutions

NoMIS Power Joins ARPA-E DC-GRIDS for 3.3 kV SiC HVDC Technology

NoMIS Introduces Medium-Voltage SiC MOSFETs for Grid and HVDC Markets

NoMIS Power Unveils 1200 V SiC MOSFET for Next-Gen Power Electronics

NoMIS Power Introduces 3.3 kV Planar SiC MOSFET

NoMIS Power Unveils Advancements in SiC Planar MOSFETs

Latest Products

.400 A Electric Vehicle Fuse

60V N-Channel MOSFET

1500 V Solar PV String Fuse

Single Coil Fast Charging Wireless Charging Receiver

NoMIS Achieves Breakthrough in SiC MOSFET Short-Circuit Withstand Time

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