NoMIS Power, a leader in advanced Silicon Carbide (SiC) power semiconductor technology, announced the commercial release of two medium-voltage SiC MOSFETs: NoMIS N3PT035MP330K (3.3 kV, 35 mΩ, 88 A) and NoMIS N3PT100MP170K (1.7 kV, 100 mΩ, 24 A). Both devices can be sampled as TO-247-4L packaged parts or as bare die.
These releases underscore NoMIS Power’s continued expansion toward higher-voltage and higher-current SiC devices and mark NoMIS’ first 1.7 kV SiC MOSFET offering, with high-resistance small-die products coming soon. Both devices are built on NoMIS’ next-generation planar SiC platform, which uses optimized unit-cell structures to extend performance from its proven 1.2 kV devices into the 1.7 kV and 3.3 kV classes. The platform is designed to enable higher efficiency, higher-frequency operation for increased converter power density, and long-term reliability in harsh operating environments.
Aligned with NoMIS Power’s focus on high-growth medium- and high-voltage markets, these devices are intended for energy & grid infrastructure (BESS, renewables, HVDC interfaces), DC solid-state protection (SSCBs), aerospace & defense mission power, transportation electrification (rail and heavy-duty EV), industrial drives, and marine electrification.
Product overview
- N3PT035MP330K – 3.3 kV SiC MOSFET: 35 mΩ, 88 A; targeted for medium-voltage converter stages that require low-loss switching and high power density.
- N3PT100MP170K – 1.7 kV SiC MOSFET: 100 mΩ, 24 A; targeted for ~1.0 kV-class DC buses used in traction auxiliaries, charging subsystems, and industrial power supplies.
Key benefits for MV/HV power conversion
NoMIS Power's medium-voltage SiC MOSFETs deliver key benefits for MV/HV power conversion, including stable performance up to 175°C, rated gate drive at +18 V and +20 V for compatibility with legacy systems, higher dv/dt capability from optimized unit-cell structures, and an improved efficiency-ruggedness trade-off in demanding switching conditions. These features stem from ultra-low specific on-resistance combined with thicker-than-standard gate oxide, enabling higher efficiency, frequency operation for greater power density, and reliability in harsh environments.
Target markets for medium-voltage SiC adoption
Medium-voltage SiC adoption targets energy and grid infrastructure like utility-scale BESS, high-power solar inverters, renewable converters, solid-state transformers, and MV/HV interfaces, alongside DC protection such as solid-state circuit breakers for resilient MV DC networks. Additional markets include aerospace and defense mission power, transportation electrification for rail and heavy-duty EVs, industrial drives, and marine electrification.
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