NoMIS Power has announced the launch of the N3PT028MP120K, a cutting-edge 1200 V, 28 mΩ Silicon Carbide (SiC) MOSFET designed to meet the growing demand for high-efficiency and high-reliability power solutions. Leveraging state-of-the-art SiC technology, this new device is set to transform performance across energy, mobility, and industrial sectors.
Features of N3PT028MP120K
- State-of-the-art SiC MOSFET technology
- Reliable gate oxide process
- 100% avalanche tested
- Low input capacitance
- Best-in-class figure-of-merits, [Ron *Ciss] and [Ron *Crss]
- Stable switching characteristics up to 175 °C
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency
- Enhanced system reliability
- Reduced total harmonic distortion
Applications of N3PT028MP120K
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