NoMIS Power, a leader in advanced Silicon Carbide (SiC) power semiconductor technology, has announced the commercial release of its first 3.3 kV SiC MOSFET, the NoMIS N3PT080MP330 — a planar device with an on-resistance of just 80 milli-ohms (34 A) and best-in-class figures of merit.
This new 3.3 kV SiC MOSFET extends NoMIS Power’s proven device technology into the medium-voltage domain, enabling next-generation efficiency, reliability, and performance for demanding power conversion applications. It provides a clear path for customers transitioning from legacy silicon solutions, while leveraging the advantages of SiC at higher voltages — including lower switching losses, higher power density, superior thermal performance, and higher survivability than Si IGBTs. Key application areas include battery energy storage systems (BESS), renewable energy converters, transportation electrification, and industrial motor drives.
The new 3.3 kV SiC MOSFET is complemented by NoMIS Power’s 160 milli-ohms SiC bi-directional switches, giving designers multiple options to precisely match device performance to application requirements. The 3.3 kV lineup will expand later this year with the launch of a 50 milli-ohms (55 A) SiC MOSFET, followed in 2026 by a 25 milli-ohms (109 A) SiC MOSFET – further pushing the boundaries of performance in this voltage class. NoMIS also offers customization and technology licensing at the 3.3 kV node for customers seeking tailored solutions.
Proven SiC process and scalable roadmap for medium-voltage MOSFETs
The new MOSFET builds on NoMIS’ established 1.2 kV planar SiC MOSFET technology, maintaining process maturity and supply chain readiness while scaling to 3.3 kV operation. This ensures a smooth migration path for customers requiring higher voltages without sacrificing manufacturability or device performance.
Leveraging this architecture, the NoMIS N3PT080MP330 combines ultra-low specific on-resistance with a thicker-than-industry-standard gate oxide. This unique approach delivers:
High efficiency at extreme voltages — low and stable conduction and switching losses up to 175 oC, compared with Si IGBTs where switching losses can double from 25 oC to 175 oC.
Design flexibility — rated performance at both +18 V and +20 V gate drive enables adoption into legacy systems and plug-and-play IGBT replacements. Unlike Si IGBTs, no separate anti-parallel diode is required.
Ruggedness and reliability — thicker gate oxide improves long-term reliability and reduces input capacitance for faster, lower-loss high-frequency switching. More robust operation in high temperature environments and high elevations with exposure to cosmic rays compared to Si IGBTs of similar rating.
Best-in-class figures-of-merit — including low [Ron x Coss] and [Ron x Crss].
“The 3.3 kV market has been waiting for a SiC MOSFET that delivers true medium-voltage capability with the performance, robustness, and design adaptability of our planar platform,” said Adam Morgan, Co-Founder and CEO of NoMIS Power. “With the NoMIS N3PT080MP330 SiC MOSFET, designers can confidently increase efficiency and power density, even in the most demanding environments.”
Applications
The N3PT080MP330 SiC MOSFET is ideally suited for several growing application areas:
Energy and Infrastructure: battery energy storage systems (BESS), high-power solar inverters, and DC solid-state circuit breakers (SSCBs) that improve efficiency and resilience in medium- and high-voltage networks.
Transportation and Marine: railway traction systems, heavy-duty EVs (buses & trucks), agriculture and construction machinery, marine propulsion, and ship-to-shore power for ports.
Charging and Industrial Systems: enabling ultra-fast EV charging stations and large industrial motor drives with reliable, high-performance power conditioning and processing control.
Click here to view the latest SiC MOSFETs on everything PE.
