Navitas Semiconductor, an industry leader in gallium nitride (GaN) power ICs, has announced its participation in the third ‘GaN Marathon’ Workshop taking place in Venice, Italy.
GaN is a next-generation power semiconductor technology running 20 times faster than traditional silicon. Compared with traditional silicon chargers, gallium nitride chargers can achieve 3x the power or 3x faster charge with up to 40% energy savings in just half the size and weight of legacy silicon solutions. GaNFast ICs integrate GaN power with drive, control, protection, and sensing to enable faster charging higher power density, and greater energy savings for mobile, consumer, enterprise, eMobility, and new-energy markets.
Founded at the prestigious, 800-year-old University of Padova, the ‘GaN Marathon’ is a dynamic forum covering the latest developments in the GaN community, with over 60 speakers, informal talks, and networking opportunities. Navitas’ Matteo Uccelli will present a technical paper entitled “Evolution in GaN Power IC Integration: Loss-less Sensing and Autonomous Protection”, which introduces the latest developments in GaNFast ICs with GaNSense technology, and leading-edge applications.
“The GaN Marathon has become an important event for the GaN community and we are happy to participate in the sold-out 2022 workshop,” says Dan Kinzer, Navitas COO/CTO, and co-founder.
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