Innoscience, a company that designs, develops, and manufactures highly performing and reliable GaN devices for a wide range of applications and voltages (30 V-650 V), has introduced INN650D080BS, a GaN enhancement mode power transistor. This transistor is manufactured using GaN-on-Silicon technology for better efficiency and device characteristics, catering to a wide range of applications. It is a normally off switch.
Key features
- Enhancement mode transistor-Normally off power switch
- Ultra high switching frequency
- No reverse-recovery charge
- Low gate charge, low output charge
- Qualified for industrial applications according to JEDEC Standards
- ESD safeguard
- RoHS, Pb-free, REACH-compliant
Key applications
This GaN-on-Silicon transistor is available in a Dual Flat No-lead package (DFN) that measures 8 mm × 8 mm.
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