The INN650D080BS from Innoscience is an Enhancement Mode GaN-on-Silicon Power Transistor that is ideal for AC-DC converters, DC-DC converters, and totem poles PFC, fast battery charging, and high density and high-efficiency power conversion applications. This JEDEC-qualified GaN transistor has a drain-source breakdown voltage of up to 650 V, a gate threshold voltage of 1.7 V, and a drain-source on-resistance of 60 milli-ohms. It has a continuous drain current of up to 29 A and a pulsed drain current of less than 58 A. This REACH-compliant GaN-on-Si transistor is a normally-off power switch and offers a very high switching frequency. It also offers zero reverse recovery charge, a low gate charge, and a low output charge. This RoHS-compliant power transistor provides electrostatic discharge (ESD) protection to prevent high electric field-related damages. It is available in a surface-mount package that measures 8 x 8 mm.