GaN Power Transistor by Innoscience (25 more products)

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INN650D080BS Image

The INN650D080BS from Innoscience is an Enhancement Mode GaN-on-Silicon Power Transistor that is ideal for AC-DC converters, DC-DC converters, and totem poles PFC, fast battery charging, and high density and high-efficiency power conversion applications. This JEDEC-qualified GaN transistor has a drain-source breakdown voltage of up to 650 V, a gate threshold voltage of 1.7 V, and a drain-source on-resistance of 60 milli-ohms. It has a continuous drain current of up to 29 A and a pulsed drain current of less than 58 A. This REACH-compliant GaN-on-Si transistor is a normally-off power switch and offers a very high switching frequency. It also offers zero reverse recovery charge, a low gate charge, and a low output charge. This RoHS-compliant power transistor provides electrostatic discharge (ESD) protection to prevent high electric field-related damages. It is available in a surface-mount package that measures 8 x 8 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    650 V Enhancement Mode GaN-on-Silicon Power Transistor


  • Configuration
  • Gate Threshold Voltage
    1.7 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    60 milli-ohm
  • Continous Drain Current
    29 A
  • Pulsed Drain Current
    58 A
  • Total Charge
    60 nC
  • Input Capacitance
    225 pF
  • Output Capacitance
    70 pF
  • Turn-on Delay Time
    3 ns
  • Turn-off Delay Time
    5 ns
  • Rise Time
    4 ns
  • Fall Time
    4 ns
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
  • Applications
    AC-DC converters, DC-DC converters, BCM/DCM totem pole PFC, Fast battery charging, High density power conversion, High efficiency power conversion
  • Dimensions
    8 x 8 mm

Technical Documents