SemiQ, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, has announced a series of highly efficient 1200 V SiC MOSFET Six-Pack Modules. These have been designed to enable large-scale, lower-cost, and more compact system-level designs. The rugged, high-speed switching SiC MOSFETs implement a planar technology with rugged gate oxide and feature a reliable body diode. These are arranged in a three-phase bridge topology, with the modules additionally featuring split DC negative terminals, press-fit terminal connections, and a Kelvin reference for stable operation.
The high-power-density modules benefit from low switching losses and low junction-to-case thermal resistance, and all parts have been tested beyond 1350 V, with 100% wafer-level burn-in (WLBI). They have been developed for applications including AC/DC converters, energy storage systems, battery charging, motor drives, and PFC boost converters, including EV fast charging, induction heating and welding, renewable energy supplies, and UPS.
The modules are operational to 175 °C junction temperature, and have been designed for easy mounting, including direct mounting to a heatsink. The product family has been launched with 20, 40, and 80 mΩ variants (GCMX020A120B2T1P, GCMX040A120B2T1P, GCMX080A120B2T1P) that have a power dissipation of 263, 160, and 103 W, respectively. They conduct a continuous drain current of 29 – 30 A and a pulsed drain current of 70 A. Additionally, they have turn-on switching energy of 0.1- 0.54 mJ and a turn-off switching energy of 0.02 – 0.11 mJ, with a switching time of 56 – 105 ns. The module is available immediately in a 62.8 x 33.8 x 15 mm package including heatsink mountings.
Click here to learn more about GCMX020A120B2T1P.
