GaNPower International was founded in 2015 and is headquartered in Vancouver, British Columbia, Canada. GaNPower International aims to advance power electronics through the development and commercialization of gallium nitride (GaN)-based power devices. The company focuses on delivering energy-efficient, high-performance solutions for applications in power electronics, electric vehicles (EVs), renewable energy, and consumer electronics, contributing to sustainability and reduced energy consumption.

GaNPower International specializes in GaN-based power devices, including:

• GaN Power Modules: High-efficiency modules for power conversion.
• GaN Power ICs: Integrated circuits for compact, high-frequency applications.
• GaN Transistors (eGaN FETs): Enhancement-mode GaN field-effect transistors for fast switching and low energy loss.
• GaN-based Chargers: Fast-charging solutions for consumer electronics and EVs.
• Custom GaN Solutions: Tailored power devices for industrial, automotive, and renewable energy applications.

GaNPower International has partnered with STMicroelectronics to enhance GaN technology development, leveraging STMicroelectronics’ manufacturing capabilities in Europe for GaN wafer production. The company collaborates with universities and research bodies to advance GaN substrate technology and epitaxial growth techniques, improving device performance and yield.

Latest Technologies

GaNPower International is at the forefront of GaN technology, focusing on:

• Enhancement-mode GaN (eGaN) FETs: These devices offer faster switching speeds, higher efficiency, and compact designs compared to silicon-based solutions, enabling up to 50% energy savings in high-power applications.
• High-Voltage GaN HEMTs: GaNPower has developed 650 V GaN high-electron-mobility transistors (HEMTs), addressing key voltage ranges for EV powertrains and renewable energy systems.
• Advanced GaN Substrates: The company is improving GaN-on-Si substrates for 8-inch wafer production, enhancing scalability and cost-effectiveness.
• Integrated GaN Drive and Control: GaNPower is advancing gate driver and controller ICs to optimize GaN device performance, focusing on thermal management and reliability.

 In June 2024, GaNPower launched a new line of 650 V GaN HEMTs optimized for EV on-board chargers, featuring improved thermal management and a 20% reduction in size compared to previous models. In January 2025, GaNPower achieved a milestone by shipping over 500 million GaN devices globally, reinforcing its position in the consumer electronics and EV markets. In February 2025, GaNPower International secured $25 million in a Series B funding round led by Parkwalk Advisors and other venture capital firms. The funds aim to scale production and expand R&D for 8-inch GaN-on-Si technology.

GaNPower International received the “CleanTech Innovation Award” at the 2024 Power Electronics Conference for its contributions to energy-efficient GaN solutions. The company was recognized by Yole Group in September 2024 as a key player in the GaN power device market, particularly for its advancements in 8-inch GaN-on-Si production. GaNPower’s proprietary GaN substrate technology, verified in an international journal in January 2025, demonstrated a 30% improvement in power regulation capacity and yield ratio compared to commercial GaN substrates. This breakthrough supports CO₂ reduction goals and enhances EV charging efficiency.

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