GPI65005DF56

GaN Power Transistor by GaNPower International (21 more products)

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The GPI65005DF56 from GaNPower International is a GaN Power Transistor with Gate Threshold Voltage 0.9 to 2.9 V, Drain Source Voltage 650 V, Drain Source Resistance 235 to 580 milli-ohm, Continous Drain Current 5 A, Pulsed Drain Current 11 A. Tags: Surface Mount. More details for GPI65005DF56 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GPI65005DF56
  • Manufacturer
    GaNPower International
  • Description
    650 V, 235 to 580 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.9 to 2.9 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    235 to 580 milli-ohm
  • Continous Drain Current
    5 A
  • Pulsed Drain Current
    11 A
  • Total Charge
    1.6 nC
  • Input Capacitance
    39 pF
  • Output Capacitance
    11.8 pF
  • Turn-on Delay Time
    5 ns
  • Turn-off Delay Time
    16 ns
  • Rise Time
    10 ns
  • Fall Time
    11 ns
  • Temperature operating range
    150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN
  • Applications
    Switching Power Applications, Server and Telecom Power Application, EV OBC and DC-DC Converters, UPS, Inverters, PV
  • Dimensions
    5 x 6 mm

Technical Documents