Onsemi has introduced a new series of FS4 IGBTs. The AFGB30T65RQDN is a 650V, 30A automotive-grade IGBT featuring onsemi’s advanced FS4 field stop technology. Engineered for high-performance automotive applications, this IGBT delivers superior efficiency with low conduction and switching losses, while offering robust short-circuit protection and an exceptional figure of merit. This IGBT is ideal for use in hybrid electric vehicles and electric vehicles.
Features of AFGB30T65RQDN
- AEC Q101 qualified
- Maximum Junction Temperature: TJ = 175?
- Positive Temperature Coefficient
- Low Saturation Voltage
- Tightened Parameter Distribution
- High Current Capability
- Short Circuit rated
Applications of AFGB30T65RQDN
Click here to learn more about onsemi's AFGB30T65RQDN.
