Navitas Launches Bi-Directional Dual-Channel GaN Gate Driver

Navitas Launches Bi-Directional Dual-Channel GaN Gate Driver

Navitas Semiconductor has unveiled the NV1702, a dual, independent-channel, digital, isolated, bi-directional GaN gate driver engineered for high-performance power electronics. Capable of operating at switching frequencies of up to 7 MHz with a CMTI of up to 200V/ns, the NV1702 delivers exceptional speed, noise immunity, and reliability for demanding applications.

Features

  • Extreme common-mode transient immunity (CMTI) up to 200V/ns
  • High switching frequency supports up to 7MHz
  • Minimum pulse width of 36ns with low distortion (<10ns) and jitter (<1ns)
  • Double capacitive isolation with peak isolation voltage > 4kVRMS
  • DC working voltage of 975V for long-term reliability
  • Input logic compatibility with 3.3V, 5V, and 12V TTL digital controls
  • Typical drive capability: 80mA pull-up / 300mA pull-down peak currents
  • Low quiescent current consumption and low standby mode current
  • Under-voltage lockout (UVLO) on all supplies
  • Advanced blanking feature for noise immunity during high dv/dt events
  • Available in SOIC16 narrow-body and SOIC14 wide-body packages

Applications

Click here to learn more about Navitas Semiconductor's NV1702.