Diodes Incorporated has announced the launch of its automotive-compliant DXTN/P 78Q and 80Q series of ultra-low VCE(sat) NPN and PNP bipolar transistors designed to maximize power density and efficiency in compact automotive applications.
The new transistor portfolio includes twelve devices rated at 30V, 60V, and 100V, optimized for demanding power switching and control applications across 12V, 24V, and 48V automotive systems.
Key Features
- Ultra-low VCE(sat) down to 17 mV, minimizing conduction losses and improving overall system efficiency
- Continuous current capability up to 10 A and peak current support up to 20 A
- Compact PowerDI®3333-8 package (3.3 mm × 3.3 mm), reducing PCB footprint by up to 75% compared with SOT223
- Ultra-low thermal resistance of 4.2°C/W for improved heat dissipation and higher power density
- Side-Wall Plateable (SWP) technology for enhanced AOI visibility and stronger solder joints
- Wide operating temperature range with junction temperature rated up to +175°C
- Robust ESD protection up to 4 kV (HBM) and 1 kV (CDM)
- AEC-qualified devices manufactured in IATF 16949-certified facilities with PPAP support
Applications
With a combination of ultra-low saturation voltage, compact packaging, and automotive-grade reliability, Diodes’ DXTN/P 78Q and 80Q series supports the development of efficient, reliable, and space-optimized power solutions for next-generation vehicles.
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