DXTP78100CFGQ-7

Note : Your request will be directed to Diodes Incorporated.

DXTP78100CFGQ-7 Image

The DXTP78100CFGQ-7 from Diodes Incorporated is an Ultra-Low Saturation Voltage PNP Transistor. It has a collector-emitter breakdown voltage of -100 V, a collector-base breakdown voltage of -110 V, and an emitter-base breakdown voltage of -8 V. This transistor supports a continuous collector current of up to -2.5 A and offers a DC current gain of over 350. It offers an ultra-low saturation voltage VCE(sat) of less than -165 mV at -2.5 A. This RoHS-compliant PNP transistor is available in a surface-mount package that measures 3.3 x 3.3 x 0.80 mm and is ideal for MOSFET and IGBT gate drivers, load switches, low-voltage regulation, DC-DC converters, motor, solenoid, relay and actuator driver controls.

Product Specifications

Product Details

  • Part Number
    DXTP78100CFGQ-7
  • Manufacturer
    Diodes Incorporated
  • Description
    100 V Ultra-Low Saturation Voltage PNP Transistor

General

  • Type
    PNP Transistor View all
  • Polarity
    PNP
  • Emitter Base Voltage
    -8 V
  • Base Emitter Saturation Voltage
    -1.05 to -0.86 V
  • Emitter Cut off Current
    -50 nA
  • Collector Base Voltage
    -110 V
  • Collector Cut off Current
    -0.3 to 1 µA
  • Collector Emitter Breakdown Voltage
    -100 V
  • Collector Emitter Voltage
    -100 V
  • Continuous Collector Current
    -2.5 to -1.5 A
  • Pulse Collector Current
    -8 A
  • DC Current Gain
    15 to 420
  • Gain Bandwidth Product
    150 to 290 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    0.9 to 2.4 W
  • Output Capacitance
    21 pF
  • Operating Temperature
    -55 to 175 Degree C
  • RoHS Compliant
  • Package Type
    Surface Mount View all
  • Package
    PowerDI3333-8
  • Application
    MOSFET & IGBT gate drivers, Load switches, Low-voltage regulation, DC to DC converters, Motors, Solenoids, Relays and actuator drivers control

Technical Documents

Latest Bipolar Junction Transistors

View more products