Alpha and Omega Semiconductor (AOS), a designer, developer, and global supplier of a broad range of discrete power devices, wide band gap power devices, power management ICs, and modules, unveiled its powerful αMOS E2™ 600V Super Junction MOSFET platform. The first high-voltage product from the newly developed platform is AOS’ AOTL037V60DE2. 600V MOSFET, designed to meet the growing demand for high efficiency and high-power density across a wide range of applications, including servers, workstations, telecom rectifiers, solar inverters, motor drives, and industrial power systems.

The design challenges of today’s mid- to high-power switched-mode power supplies (SMPS) and solar inverter systems can be distilled into four key requirements: higher efficiency, greater power density, lower overall system cost, and uncompromised robustness. To meet these expectations, High-Voltage Super Junction MOSFETs have become the preferred devices for critical topologies, including the slow leg of totem-pole PFC, LLC resonant converters, PSFB, and cyclo-converters.

AOS engineered its advanced αMOS E2™ High-Voltage Super Junction MOSFET platform with a robust intrinsic body diode to reliably handle hard commutation scenarios, such as reverse recovery of the freewheeling body diode that can occur during abnormal events, such as short-circuits or start-up transients. The AOTL037V60DE2, available in a TOLL package, features a maximum RDS(ON) of 37 milliohms. In evaluations conducted by AOS’ application engineering team, the body diode ruggedness of this αMOS E2™ MOSFET demonstrated the ability to withstand di/dt = 1300 A/µs under specific forward current (IF) conditions at a junction temperature of 150 °C. Moreover, AOS testing confirmed that the AOTL037V60DE2 delivered superior Avalanche Unclamped Inductive Switching (UIS) capability and a longer Short-Circuit Withstanding Time (SCWT) when compared to competing MOSFETs. This enhanced ruggedness translates into greater system-level reliability, ensuring robust performance even under abnormal operating scenarios.

“We designed this platform and the first high-voltage MOSFET to address the needs of traditional AC/DC power supplies, as well as DC/DC converters and DC/AC inverters, where achieving high power density and efficiency remains a critical challenge. Leveraging AOS’ extensive MOSFET engineering expertise, we know the breakthrough capabilities of αMOS E2™ High-Voltage Super Junction MOSFET platform and the AOTL037V60DE2 solve these challenges enabling mid- to high-power application designers of power supplies, solar PV inverters, and DC/DC converters to effectively satisfy today’s and future power efficiency, durability and lower cost demands,” said Simon Yu, Senior Product Line Manager at AOS.

Technical Highlights

• Optimized for soft-switching topologies with exceptionally low switching losses
• Rugged body diode featuring reduced Qrr for demanding and high-stress applications
• Enhanced robustness with strong UIS, inrush current handling, and wide SOA capabilities
• Designed to prevent self-turn-on, ensuring reliable operation under dynamic conditions
• Suitable for Totem Pole PFC, LLC, PSFB, and CrCM H-4/Cyclo Inverter applications

Click here to learn more about AOTL037V60DE2.