Vanguard International Semiconductor (VIS) announced that it has signed a technology licensing agreement with Taiwan Semiconductor Manufacturing Company (TSMC) for high-voltage (650 V) and low-voltage (80 V) Gallium Nitride (GaN) technologies. This agreement will help VIS accelerate the development and expansion of next-generation GaN power technologies for applications such as data centres, automotive electronics, industrial control, and energy management, which are key areas that demand high-efficiency power conversion.
Through this licensing agreement, VIS will expand its GaN-on-Si technology into high-voltage applications and offer a comprehensive GaN-on-Si platform for power applications. Combined with its existing GaN-on-QST technology platform, VIS will become the only foundry in the world capable of offering power GaN technologies on both silicon and QST substrates. VIS will support complete product solutions covering low voltage (<200 V), high voltage (650 V) and ultra-high voltage (1200 V), further strengthening its technology roadmap for high-efficiency power conversion.
As traditional silicon-based technologies approach their performance limits, GaN, with its high power conversion efficiency, high power density, and compact form factor, has emerged as a key material for next-generation power technologies. VIS is actively building a comprehensive portfolio of power GaN technologies ranging from 15 V to 1200 V, providing customers with more flexible and competitive options. Leveraging this technology license, VIS will develop a power GaN technologies platform that seamlessly integrates with its existing platforms. The technology will be validated on VIS’ mature 8-inch manufacturing line to ensure process stability and high yield. Development activities are expected to commence in early 2026, with production scheduled for the first half of 2028.
“This technology licensing agreement not only underscores the engagement and ongoing collaborative efforts between VIS and TSMC, but also represents our continued commitment to advancing a comprehensive power GaN product portfolio and strengthening our strategic position in compound semiconductors,” said Dr. John Wei, President of VIS. “Through this collaboration, we will accelerate our support for customers in high-performance power conversion applications, enabling the semiconductor power technology to move into the next generation and helping realise a future of green energy and intelligent technologies.”
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