Efficient Power Conversion (EPC), the world leader in enhancement-mode gallium nitride (eGaN) power devices, announces the start of volume production of the EPC2366, the first of its seventh-generation (Gen 7) eGaN® family of power transistors. This seventh-generation platform delivers a new state-of-the-art in transistor performance. EPC2366 delivers up to 3× better performance than equivalent silicon MOSFETs. With a typical RDS(on) of 0.84 mΩ and a highly optimized RDS(on) × QG figure of merit (FoM) of 12.6 mΩ *nC, it simultaneously cuts conduction and switching losses while improving thermal performance. Engineered for high-efficiency, high-density power systems, the device excels in synchronous rectification, high-density DC-DC conversion, AI server power supplies, and advanced motor drives.
It supports drain-to-source voltages of up to 40 V and transient voltages of up to 48 V, with continuous drain currents of up to 88 A and pulsed currents of up to 360 A, making it well-suited for the most demanding power systems. The device is thermally optimized for high power density thanks to its small 3.3 × 2.6 mm PQFN package with a thermal resistance from the junction to the case of 0.6 °C/W.
According to Alex Lidow, CEO and Co-founder of EPC, “We have developed a seventh-generation GaN platform that creates a new state-of-the-art in power transistor performance. The 40 V, EPC2366 is the first of this family to enter mass production. However, EPC is sampling seventh-generation 25 V and 15 V transistors now and expects more mass production transitions in the first half of 2026.”
To accelerate design-in and evaluation, EPC also offers the EPC90167 half-bridge evaluation board, which integrates two EPC2366 transistors in a low-parasitic layout with support for standard PWM drive signals and flexible input modes, providing engineers a reference platform to assess performance in real-world applications.
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