The EPC2366 from Efficient Power Conversion is an Enhancement Mode GaN FET. This transistor has a drain-source voltage of up to 40 V, a gate threshold voltage of less than 2.5 V, and a drain-source on-resistance of 0.8 milli-ohms. It has a continuous drain current of up to 68 A and a pulsed drain current of less than 360 A. This normally off transistor features an industry-leading R_DS(on) x Q_G figure of merit with zero reverse recovery and superior thermal performance. It has ultra-low gate charge and faster switching speeds for high-frequency operations.  

This RoHS-compliant GaN transistor has exceptionally high electron mobility and a low temperature coefficient, while the lateral structure of the die provides for very low gate charge (Q_G) and extremely fast switching times. It is available in a surface-mount package that measures 3.3 x 2.6 mm and is ideal for high-performance, high power-density DC-DC conversion, high frequency DC-DC conversion and synchronous rectifiers.