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| 1.5 kW Sine Wave Power Inverter for Railway Applications | |
DC to AC Inverter
from Premium PSU
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| The ODS-1500-7116-TI from Premium PSU is a Sine Wave Power Inverter that converts a DC input voltage of 50.4 - 90 V to an AC output voltage of 230 V. It delivers an output power of 1500 W and has an efficiency of up to 90%. This DC-AC inverter has a high input-output isolation of 3000 Vrms and a selectable output frequency of 50/60Hz. It can be remotely controlled via RS232. |
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| Automotive Qualified Hot-Swap Protection IC | |
eFuse IC
from Monolithic Power Systems
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| The MPQ5068-AEC1 from Monolithic Power Systems is an Automotive-Qualified Hot-Swap Protection IC that is designed to protect circuitry on its output from transients on its input. It requires an input voltage of 6 - 28 V. This eFuse IC features an external capacitor to control the slew rate at the output. It integrates a 7 milli-ohms power FET whose gate is driven by an internal charge pump. |
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| 40 V Silicon P-Channel Junction Field Effect Transistor | |
Junction Field Effect Transistor (JFET)
from Central Semiconductor
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| The 2N5461 from Central Semiconductor is a Silicon P-Channel Junction Field Effect Transistor (JFET) that is ideal for low level amplifier applications. It has a drain-gate voltage of up to 40 V and a gate-source voltage of 0.5 - 4 V. This RoHS-compliant switch has a power dissipation of less than 0.31 W. It is available in through-hole package that measures 17.02 x 4.45 mm. |
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| 1700 V Trench Gate IGBT for UPS Applications | |
IGBT
from Semikron
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| The SEMiX604GB176HDs from Semikron is a Trench Gate IGBT that is ideal for AC inverter drives, UPS, electronic welder applications. It has a saturated collector-emitter voltage of up to 2.45 V, a collector-emitter breakdown voltage of less than 1700 V, and a gate threshold voltage of 5.8 V. This IGBT has a collector current of up to 567 A. It offers homogeneous Silicon-based construction. |
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| 100 V N-Channel Trench MOSFET for Telecom Applications | |
MOSFET
from Alpha & Omega Semiconductor
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| The AOTL66912Q from Alpha & Omega Semiconductor is an N-Channel Trench MOSFET that is ideal for telecom hot-swap, load switch, solar, and battery management applications. It has a drain-source breakdown voltage of 100 V, a gate threshold voltage of 3 V, and a drain-source on-resistance of less than 1.7 milli-ohms. This MOSFET has a continuous drain current of up to 380 A. |
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| 30 V NPN Transistor for Small Signal Applications | |
Bipolar Junction Transistor
from SeCoS Corporation
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| The KTC3265-Y from SeCoS Corporation is an NPN Small Signal Transistor that has been encapsulated with plastic. It has a collector-emitter breakdown voltage of over 30 V, an emitter-base voltage of up to 5 V, and a saturated collector-emitter voltage of less than 0.5 V. This transistor has a collector current of up to 800 mA and a power dissipation of less than 200 mW. |
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| Automotive Qualified Dual Half-Bridge Pre-Driver | |
Gate Driver
from STMicroelectronics
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| The L99H92QF-TR from STMicroelectronics is an Automotive-Qualified Dual Half-Bridge Pre-Driver that is compatible with standard-level threshold N-MOSFETs. It requires an input voltage of 4.51 - 28 V. This gate driver has 3.3 V/5 V compatible I/Os with all pins linked to the microcontroller. It has a fail-safe input and its VDD is made tolerant to battery exposure. |
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| Sponsored by PEMD 2024 | | PEMD 2024 | | PEMD is a world-leading forum on power electronics, machines and drives, where industry and academia converge to network, publish results of exciting new research, showcase technical advances, and share knowledge with a growing community.The high-quality, technically focused program includes peer-reviewed paper sessions, keynote addresses from thought leaders, industry briefing sessions, and interactive tutorials. Click here to learn more. | | | |
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| 4.5 V LDO Voltage Regulator for Motherboard Applications | |
LDO Voltage Regulator
from AiT Semiconductor
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| The A6501AK3R-25 from AiT Semiconductor is an LDO Voltage Regulator that is ideal for power management for computers, mother boards, graphic cards, LCD monitors and LCD TVs, DVD decoder boards, reference voltage source, and regulation after switching power. It requires an input voltage of 2 - 6 V. This regulator provides an output voltage of 2.5 V and has a dropout voltage of 50 mV. |
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| 150 W Isolated Buck DC-DC Converter | |
DC to DC Converter
from CUI
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| The PSC150W-110-S12 from CUI is an Isolated Buck DC-DC Converter that converts an input voltage of 14 - 160 V to an output voltage of 12 V. It delivers an output power of up to 150 W and has an efficiency of 88.5%. This converter provides input-to-output isolation of 3000 V (AC) and has built-in over-current, over-temperature protections for safety. |
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| 650 V GaN Field Effect Transistor for Consumer Applications | |
GaN Power Transistor
from Transphorm
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| The TP65H480G4JSGB from Transphorm is a GaN Field Effect Transistor that combines state-of-the-art high-voltage GaN HEMT with a low-voltage silicon MOSFET to offer superior reliability and performance. It has a drain-source voltage of over 650 V, a gate threshold voltage of 2.4 V, and a drain-source on-resistance of 480 milli-ohms. |
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| 100 Kilo-Ohms Automotive Qualified Metal Thin Film Chip Resistor | |
Power Resistor
from Susumu International
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| The RT1220Q-332-M from Susumu International is an Automotive Qualified Metal Thin Film Chip Resistor that has been designed to provide high accuracy and anti-vibration stability for sensor circuits, PA modules of mobile phones, and other electronic devices. It has a resistance of 100 kilo-ohms and a resistance tolerance of ±20 %. This AEC-Q200-qualified chip resistor has a voltage rating of 100 V. |
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| 2300 V Fast Switching Thyristor for Medical Applications | |
Silicon Controlled Rectifier
from MS Power
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| The MS TF2825C23F2G from MS Power is a Fast-Switching Thyristor that is ideal for battery chargers, medical equipment, UPS, power supplies, motor control, transportation, induction heating, and welding applications. It has a break-over voltage of up to 2300 V and a break-over current of less than 56 kA. This thyristor has a gate trigger voltage of up to 4.5 V and a gate trigger current of 450 mA. |
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| 400 V Silicon Bidirectional Thyristor | |
Triac
from Digitron Semiconductors
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| The T2500DHR from Digitron Semiconductors is a Silicon Bidirectional Thyristor ideal for general-purpose AC switching applications. It has a break-over voltage of 400 V and a break-over current of less than 60 A. This thyristor has a gate trigger voltage of 0.2 - 2.5 V and a gate trigger current of 10 - 60 mA. This thyristor is available in a through-hole package that measures 30.02 x 10.290 mm. |
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| 4500 V Gate Turn-Off Thyristor for Motor Drive Applications | |
Gate Turn off Thyristor
from Dynex Semiconductor
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| The DG858BW45 from Dynex Semiconductor is a Gate Turn-Off Thyristor that offers excellent turn-off capability, thereby resulting in reduced equipment size and weight. It has a break-over voltage of 4500 V and a break-over current of less than 3000 A. This thyristor has a gate trigger voltage of up to 1.2 V and a gate trigger current of less than 4 A. |
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| 125 V Bidirectional Sidac for Direct Switching Applications | |
Sidac
from Shindengen America
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| The K1V14 from Shindengen America is a Bidirectional Sidac that has been designed to provide direct switching with commercial power sources. It has a break-over voltage of over 125 V and a break-over current of less than 0.5 mA. This RoHS-compliant sidac offers greater reliability and generates a wide range of pulse signals suitable for diverse applications. |
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| CMOS Ultra-Low Power Voltage Regulator for Portable Applications | |
LDO Voltage Regulator
from Nisshinbo Micro Devices
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| The R1561SC01B from Nisshinbo Micro Devices is a CMOS-Based Voltage Regulator that is ideal for refrigerators, rice cookers, electric kettles, laptop PCs, digital TVs, telephones and home LAN system applications. It requires an input voltage of 5.5 - 60 V. This regulator provides an output voltage of 11.856 - 12.144 V and has a drop-out voltage of 1.3 V (at 5 V). |
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| 1200 V Field Stop Trench IGBT for UPS Applications | |
IGBT
from Fuji Electric
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| The FGW25N120VD from Fuji Electric is a Field Stop Trench IGBT that is ideal for uninterrupted power supplies (UPS), power conditioners, and power factor correction (PFC) applications. It has a collector-emitter voltage of less than 1200 V, a saturated collector-emitter voltage of 1.85 V, and a gate-emitter threshold voltage of 6.5 V. This IGBT has a DC collector current of up to 48 A. |
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| 100 V Enhancement Mode GaN-on-Silicon Power Transistor | |
GaN Power Transistor
from Innoscience
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| The INN100W070A from Innoscience is an Enhancement Mode GaN-on-Silicon Power Transistor that is ideal for synchronous rectification,class-D audio, high frequency DC-DC converter, communication base station and motor driver applications. This GaN transistor has a drain-source voltage of over 100 V, a gate threshold voltage of 1.1 V. |
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