| Featured Products this Week |
|
|
| 1700 V Silicon N-Channel IGBT | |
IGBT
from Minebea Power Semiconductor Device
|
| The MBL1200F17F from Minebea Power Semiconductor Device is a Silicon N-channel IGBT. It has a collector emitter voltage of 1700 V with a forward current of 2400 A. This IGBT has a gate emitter threshold voltage of up to 7.1 V and a gate emitter voltage of 20 V. It has a peak forward voltage drop of up to 1.6 V and a reverse recovery time of 1.6 µs. This IGBT operates over a wide range of temperatures from -50°C to +150°C. |
| |
Download Datasheet
Product Details | |
|
|
|
| 3-Phase ePower Stage IC | |
Motor Driver IC
from Efficient Power Conversion
|
| The EPC33110 from Efficient Power Conversion is a Three-Phase ePower Stage IC designed for motor drive inverters. It requires an absolute maximum input voltage of up to 100 V, a maximum operating PWM frequency of 3 MHz, a continuous power stage load current of 20 A, and a nominal bias supply voltage of 5 V. It features independent high-side and low-side control inputs for all phases, logic lockout that commands both FETs off when inputs are simultaneously high. |
| |
Download Datasheet
Product Details | |
|
|
|
| 3 V Photorelay | |
Power Switch IC
from Toshiba
|
| The TLP3407SRB from Toshiba is a Photorelay that is ideal for ATE (Automatic Test Equipment), probe cards, measuring instruments, high-speed logic IC testers, and high-speed memory testers. It has an operating voltage of up to 3 V and an OFF-state output terminal voltage of 60 V. This power switch provides an isolation voltage of 500 Vrms and has a trigger LED current of 0.2 mA. It provides an ON-state current of 1 A and has an ON-state resistance of 0.2 Ω. |
| |
Download Datasheet
Product Details | |
|
|
|
| 3W Isolated DC-DC Converters | |
DC to DC Converter
from Traco Power
|
| The TMR 3WI Series from Traco Power are isolated DC-DC converters that convert an input voltage of 4.5-75 V to output voltages of about +/-15 V. They have an efficiency of up to 82% and have a power rating of 3W. These converters feature an ultra-wide 4:1 input voltage range and offer high power density. They operate from -40 to 85°C and include remote on/off control and continuous short circuit protection. It offers an input-output isolation of 1600 VDC. |
| |
Download Datasheet
Product Details | |
|
|
|
| 40 V E-Mode Bi-Directional GaN Transistor | |
GaN Power Transistor
from Infineon Technologies
|
| The IGK120B041S from Infineon Technologies is an E-Mode Bi-Directional GaN Transistor. This JEDEC-qualified transistor has a drain-source voltage of up to 40 V, a gate threshold voltage of less than 2.9 V, and a drain-source on-resistance of 9 milli-ohms. It has a continuous drain current of 30 A and a pulsed drain current of 59 A. It is available in a surface-mount package measuring 1.700 x 1.200 x 0.597 mm and is suitable for OVP protection in smartphone USB ports. |
| |
Download Datasheet
Product Details | |
|
|
| Sponsored by 2026 SMM ASEAN Automotive Supply Chain Conference | | 2026 SMM ASEAN Automotive Supply Chain Conference | | The 2026 SMM ASEAN Automotive Supply Chain Conference will take place on June 16–17, 2026, in Bangkok, Thailand, bringing together OEMs, suppliers, battery manufacturers, and industry stakeholders to discuss the rapidly evolving EV and automotive supply chain landscape in Southeast Asia. The event will focus on EV manufacturing, battery supply chains, localization strategies, investment opportunities, and supply-demand matchmaking across the ASEAN automotive ecosystem. Click here to learn more. | | | |
|
|
| PCB-Mounted Precharge Power Relays | |
Power Switch IC
from Omron Corporation
|
| The G9KJ Series from Omron Corporation are PCB-Mounted Precharge Power Relays designed for high-voltage DC switching applications up to 1500 VDC and 25 A. These relays have a rated voltage of up to 24 VDC and a rated current of up to 44.1 A. They feature low coil power consumption of 530 mW. These power switches offer low initial contact resistance of less than 1087 ohms and utilise silver alloy with PCB terminations. |
| |
Download Datasheet
Product Details | |
|
|
|
| Ultra-Low Capacitance ESD Protection Diode | |
Power Diode
from ROHM Semiconductor
|
| The RESD3V3BAED from ROHM Semiconductor is an Ultra-Low Capacitance ESD Protection Diode that provides bidirectional ESD Protection for a single line. It has a reverse standoff voltage of 3.3 V and a clamping voltage of up to 9 V. This diode has a breakdown voltage of 9 V and a leakage current of less than 10 nA. It can withstand a peak pulse current of up to 6 A. This TVS diode has an ultra-low leakage current of 10 nA. |
| |
Download Datasheet
Product Details | |
|
|
|
| 3300 V Industrial-Qualified Full-Bridge SiC Power Module | |
MOSFET
from Wolfspeed
|
| The IBB020A33GM4 from Wolfspeed is an Industrial-Qualified Full-Bridge Silicon Carbide Power Module. It has a drain-source voltage of 3300 V, and a gate threshold voltage of up to 4 V. This MOSFET has a drain current of 95 A, an internal gate resistance of 1 ohm and a power dissipation of 580 W. It offers increased system efficiency due to low switching & conduction losses of SiC. It enables two-level conversion for 2000 V or greater DC systems. |
| |
Download Datasheet
Product Details | |
|
|
|
| 2 kW Personal Computer Power Supply | |
AC to DC Converter
from FSP Group
|
| The FSP2000-57APB from FSP Group is a Personal Computer Power Supply that converts an AC input voltage of 100-240 V to a DC output voltage of 12 V. It delivers an output power of 2000 W and provides 80 plus platinum efficiency. This AC-DC converter features Intel PSDG ATX 12V V3.1 version and supports PCIe Gen5 regulation. It provides two PCIe Gen 5 (12V-2x6) connectors and three CPU connectors. |
| |
Download Datasheet
Product Details | |
|
|
|
| IEEE 802.3at PD Controllers | |
Power Over Ethernet IC
from Analog Devices
|
| The LTC4269-1 from Analog Devices are IEEE 802.3at PD Controllers. They require an input voltage of 18-60 V. These controllers integrate a synchronous no-opto flyback switching regulator to enable efficient isolated multi-output power conversion for 10-25 W PoE applications. They support both 1-event and 2-event classification and provide a Type-2 PSE indicator, using an integrated signature resistor and programmable class current. |
| |
Download Datasheet
Product Details | |
|
|
| Sponsored by 2026 SMM ASEAN Automotive Supply Chain Conference | | |
|
|
| 24 V Switch-Mode Power Supply | |
AC to DC Converter
from Weidmuller
|
| The PRO ECO 480W 24V 20A II from Weidmuller is a Switch-Mode Power Supply that converts an AC input voltage of 85-264 V to a DC output voltage of 24 V. It also accepts a DC input voltage of 120-340 V. This AC-DC converter delivers an output power of 480 W and has an efficiency of up to 94.9%. It has a power factor of 0.95 and has an output current rating of 20 A. It operates over a temperature range of -25 to 70°C and weighs 1230 g. |
| |
Download Datasheet
Product Details | |
|
|
|
| 1.2 µH Multilayer Metal Power Inductor | |
Power Inductor
from Taiyo Yuden
|
| The LSCND0805FET1R2MJ from Taiyo Yuden is a Multilayer Metal Power Inductor. It has an inductance of 1.2 µH and a tolerance of ±20%. This power inductor has a current rating of 0.65 A and a saturation current of 0.75 A. It has a DC resistance of up to 0.615 ohms and operates at a measuring frequency of 1 MHz. It operates at a wide temperature range of -40 to 125°C. It is available in a surface-mount package that measures 0.8 x 0.45 x 0.65 mm. |
| |
Download Datasheet
Product Details | |
|
|
|
| 3.3-22 mH Current-Compensated Double Chokes | |
Power Inductor
from TDK Corporation
|
| The B82722V6*B040 Series from TDK Corporation are Current-Compensated Ring Core Double Chokes. They have an inductance of 3.3-22 mH. These IEC/EN 60938-2-compliant inductors have a current rating of 0.85-3.0 A and a voltage rating of 630 V AC/1250 V DC. They have a high resonance frequency due to a special winding technique. These UL 94 V-0-rated inductors have a ferrite core with epoxy coating and include a plastic base plate. |
| |
Download Datasheet
Product Details | |
|
|
|
| 650 V GaN Power Transistor | |
GaN Power Transistor
from Nexperia
|
| The GAN039-650NBB from Nexperia is an Automotive Qualified GaN Power Transistor. This transistor has a drain-source breakdown voltage of 650 V, a gate threshold voltage of up to 4.6 V, and a drain-source on-resistance of 33-86 milli-ohms. It has a continuous drain current of 58.5 A. It has a simplified driver design that requires a 12 V drive voltage and can be used with standard-level MOSFET gate drivers. It provides optimum operation up to 150°C. |
| |
Download Datasheet
Product Details | |
|
|
|
| 750 A High Precision DC and AC Current Clamp-on | |
Current Transducer
from Danisense
|
| The MK500ID from Danisense is a High Precision DC and AC Current Clamp-on that is ideal for EV battery testing, temporary installations, calibration, and in-field analysis, EV inverter evaluation, PV power generation, retrofit and maintenance purposes, transmission and distribution, wind, solar and energy applications. It can continuously measure current levels of up to 750 A with a linearity error of less than 20 ppm. |
| |
Download Datasheet
Product Details | |
|
|
|
| 600 V Half-Bridge Gate Driver | |
Gate Driver
from STMicroelectronics
|
| The STDRIVEG612 from STMicroelectronics is a Half-Bridge Gate Driver that is ideal for AC/DC and DC/DC conversion, synchronous rectification, resonant converters, PFC, adapters, and battery charger applications. It requires an input voltage of 10.3-18 V. This gate driver IC has been designed to withstand a voltage of 600 V on the high-voltage rails on the high side. It can also handle high current and supports a propagation delay of 50 ns. |
| |
Download Datasheet
Product Details | |
|
