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New Power Electronics Products this Week - 18 October 2024

18 October 2024 Newsletter - everything PE

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Weekly Edition
Date: 18 October 2024
 
Sponsored by Microgrids & Energy Resilience Summit 2024
 
 
Featured Products this Week
Battery Management IC
Negative Voltage Charge Protection IC for Handheld Applications
Battery Management IC  from ROHM Semiconductor

The BD6046GUL-E2 from ROHM Semiconductor is a Charge Protection IC that has been designed to protect electronic devices from abnormal input voltage events occurring at the USB port. It requires an input voltage of up to 28 V. This IC can prevent the negative voltage from occurring due to USB reverse insertion faults, without using additional components. It integrates a low drain-source on-state resistance FET transistor to provide faster switching.
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Supercapacitor
3.8 mF Wet Tantalum Supercapacitor
Supercapacitor  from Vishay

The HE5B382K100BZSS from Vishay is a Wet Tantalum Supercapacitor that is ideal for industrial, avionics /military/space applications. It has a capacitance of 3.8 mF and a capacitance tolerance of ±10%. This capacitor has a voltage rating of 100 V and an equivalent series resistance (ESR) of less than 65 milli-ohms. It utilizes Vishay's proven SuperTan technology to provide very high capacitance and high energy design.
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Power Switch IC
Analog SPDT Switch for Battery-Operated Equipment Applications
Power Switch IC  from AiT Semiconductor

The A4759E6R from AiT Semiconductor is a Single-Pole Double-Throw (SPDT) Analog Switch that is ideal for mobile phones, portable instrumentation, consumer and computing, battery-operated equipment, signal gating, chopping, modulation or demodulation (modem) applications. It requires an input voltage of 1.8 - 5.5 V and an input current of less than 1 µA. This analog switch exhibits a low on-state resistance, which helps in minimizing power losses.
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IGBT
1350 V Fast-Switching IGBT for AC and DC Motor Drive Applications
IGBT  from Diotec Semiconductor

The DIW030F135 from Diotec Semiconductor is a Fast-Switching IGBT that is ideal for frequency inverters, and AC and DC motor drive applications. It has a collector-emitter breakdown voltage of up to 1350 V, a saturated collector-emitter voltage of 2.3 V, and a gate-emitter voltage of ±20 V. This IGBT has a continuous collector current of less than 60 A and a gate-emitter leakage current of up to ±100 nA. It has a power dissipation of less than 350 W.
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Gate Driver
High-Side Gate Driver IC for Drone Applications
Gate Driver  from Infineon Technologies

The 1EDL8011XUMA1 from Infineon Technologies is a High-Side Gate Driver IC that is ideal for battery management systems (BMS), cordless power tools, e-bike solutions, multicopters and drones, and power tool applications. It requires an input voltage of 8 - 125 V. This driver consists of a control logic, charge pump, protection functionalities, switch, and active/passive components. It controls the disconnect switch located at the high side.
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MOSFET
40 V Automotive-Qualified N-Channel MOSFET
MOSFET  from Micro Commercial Components

The MCAC3D8N04YHQ-TP from Micro Commercial Components is an Automotive-Qualified N-Channel MOSFET that provides a high-density cell design to ensure very low drain-source on-resistance. It has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of 3 V, and a drain-source on-resistance of less than 3.8 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of up to 110 A and a power dissipation of less than 83 W.
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Featured Interview
Featured Interview
Interview with Darrel Kingham from Pulsiv
everything PE recently interviewed Darrel Kingham, Chief Executive Officer at Pulsiv. Pulsiv focuses on improving the efficiency and performance of power supplies in electronic devices.Click here to learn more.
EV ECU
IP6K7-Rated Vehicle Control Unit for Electric Vehicle Applications
EV ECU  from AEM Electronics

The VCU200 from AEM Electronics is a Vehicle Control Unit that has been designed to control all critical vehicle systems such as an inverter, pre-charge resistors, high voltage contactors, DC/DC converter, onboard charger, and battery management system. It requires an input voltage of 9 - 16 V. This vehicle control unit integrates multiple high-performance components to provide advanced data acquisition and control capabilities.
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Electric Vehicle Battery
Cylindrical Hi Ni Battery for Electric Vehicles
Electric Vehicle Battery  from BAK Power Battery

The N18650CL-29 from BAK Power Battery is a Cylindrical Hi-Ni Battery that has been designed to provide high battery capacity for very long standby applications. It has a capacity of 2.9 Ah. This battery provides a charging current of 0.5 C and a charging voltage of up to 4.2 V. It has excellent safety performance and low-temperature adaptability, which ensures longer service life. This Hi-Ni EV battery measures 64.85 x 18.4 mm.
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EV Traction Motor
230 kW Motor/Inverter System for Off-Highway Applications
EV Traction Motor  from Dana TM4

The SUMO MD MV2500-6P from Dana TM4 is an Automotive-Qualified Motor/Inverter System that has been designed to interface directly with standard e-axles. It delivers a continuous output power of 115 kW and a peak output power of 230 kW. This motor provides a torque of 1140 Nm and has a speed of up to 3000 rpm. It comes with proven permanent magnet technology for optimal efficiency and an outer rotor topology for maximum torque density.
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Power Capacitor
56 nF Automotive-Qualified Ceramic Capacitor
Power Capacitor  from TDK Corporation

The B58043I9563M052 from TDK Corporation is an Automotive-Qualified Ceramic Capacitor that is ideal for power converters, inverters, DC links, fast switching, and snubber circuit applications. It has a capacitance of 56 nF and a capacitance tolerance of ±20%. This capacitor has a voltage rating of 900 V. It has a high capacitance density and handles high ripple currents. This ceramic capacitor is not limited by the value of dv/dt.
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Gate Driver
Automotive-Qualified Gate Drive Optocoupler IC
Gate Driver  from Broadcom

The ACPL-K34T-000E from Broadcom is an Automotive-Qualified Gate Drive Optocoupler that is ideal for hybrid power train DC-DC converters, EV/PHEV chargers, automotive isolated MOSFET gate drive, AC and brushless DC motor drive applications. It requires an input voltage of 10 - 20 V and provides an output current (peak) of over 2.5 A. This optocoupler contains an AlGaAs LED optically coupled to an integrated circuit with a power output stage.
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DC to DC Converter
Isolated Boost DC-DC Converter for Relay-Driven Circuit Applications
DC to DC Converter  from MORNSUN

The B2403LS-1WR3 from MORNSUN is an Isolated Boost DC-DC Converter that converts an input voltage of 21.6 - 26.4 V to an output voltage of 3.3 V. It delivers an output power of up to 1 W and has an efficiency of 75%. This converter is designed with an industry-standard pin-out configuration to ensure seamless integration into various systems without causing compatibility concerns. It offers continuous short-circuit protection.
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Sponsored by Microgrids & Energy Resilience Summit 2024
Microgrids & Energy Resilience Summit 2024
Microgrids & Energy Resilience Summit 2024
DSI’s Microgrids & Energy Resilience Summit will bring together DoD, federal government, and industry to drive the integration and connectivity of microgrids and distributed energy resources into our defense energy ecosystem. The 2024 Summit will focus on microgrid deployment and implementation to enhance energy security and operational efficiencies across U.S. military bases and installations and provide reliable power for operations across critical infrastructures.Click here to learn more.
DC to AC Inverter
1600 W Bluetooth-Enabled DC-AC Inverter
DC to AC Inverter  from Victron Energy

The 12/2000 from Victron Energy is a DC-AC Inverter that converts a DC input voltage of 9.3-17 V to an AC output voltage of 230 V. It delivers a continuous output power of 1600 W and a peak output power of 4000 W. This inverter is equipped with Bluetooth technology, which allows full configuration of parameters through a tablet or smartphone. It offers ECO mode that reduces energy consumption by switching the inverter to standby.
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eFuse IC
Electronically-Controlled Hot-Swap eFuse IC for Server Applications
eFuse IC  from onsemi

The NCP81295MNTXG from onsemi is an Electronically-Controlled Hot-Swap e-Fuse that has been designed for use in 12 V, high current applications such as servers, storage, and base stations. It requires an input voltage of 4.5 - 18 V and provides an output current of 60 A (peak, paralleling option available to boost output current). This eFuse IC integrates a power switch, a hot-swap controller, a current sensor for monitoring, and overload protection in a compact size.
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Motor Driver IC
Microstepping DMOS Motor Driver IC for Bipolar Stepper Motor Applications
Motor Driver IC  from Allegro MicroSystems

The A5977GLPTR-T from Allegro MicroSystems is a Microstepping DMOS Motor Driver IC that has been designed for driving bipolar stepper motors in full/half/quarter/eighth-step modes.  It requires an input voltage of 8 - 40 V. This motor driver includes a fixed off-time current regulator that can operate in slow, fast, or mixed-decay modes, which ensures reduced audible motor noise, increased step accuracy, and reduced power dissipation.
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AC to DC Converter
12 W AC-DC Converter for Industrial Applications
AC to DC Converter  from Astrodyne TDI

The PWC12-24 from Astrodyne TDI is an AC-DC Converter that converts an AC input voltage of 90 - 264 V to an output voltage of 24 V. This AC-DC converter delivers a DC output power of up to 12 W and has an efficiency of up to 82%. It offers an input-output isolation of 3000 V. This EN55022 Class B-compliant converter can operate over -25 to +65ºC. It is available in an open-frame package that measures 1.12 x 2.0 x 0.83 mm and is ideal for industrial applications.
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Power Switch IC
CMOS-Based Dual Supply Voltage Load Switch IC for Portable Device Applications
Power Switch IC  from Nisshinbo Micro Devices

The R5543K001D-E2 from Nisshinbo Micro Devices is a CMOS-based dual supply voltage load switch IC that is designed for supplying the power from the secondary power source such as the output of a step-down DC-DC converter to the load circuit. It requires an input voltage of 0.6 - 4.8 V and provides an output current of 3 A. This power switch features a built-in N-channel transistor to provide a low dropout voltage and prevent the reverse current during shutdown mode.
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Junction Field Effect Transistor (JFET)
Junction Field Effect Transistor for Military Applications
Junction Field Effect Transistor (JFET)  from Solitron Devices

The JANTXV2N4857 from Solitron Devices is a Radiation-Tolerant Junction Field Effect Transistor that is ideal for military applications. It has a gate-source voltage of -40 V and a drain-source on-resistance of 40 ohms. This junction field effect transistor (JFET) has a power dissipation of less than 1800 mW. It offers features such as low on resistance, fast switching, and high off-isolation. This MIL-PRF-19500/385-qualified JFET includes S-level equivalent screening.
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Sponsored by Microgrids & Energy Resilience Summit 2024
 
 
Varistor
650 V Thermally-Protected Metal Oxide Varistor
Varistor  from Meritek Electronics Corporation

The TPV14N431KS from Meritek Electronics Corporation is a Thermally-Protected Metal Oxide Varistor. It has an AC voltage rating of 250 V, a DC voltage rating of 320 V, and a clamping voltage of less than 650 V. It is thermally protected which improves safety and reliability features, and has a high peak surge current rating of up to 10 kA. This varistor features standard lead form and spacing options to provide proper spacing for heat dissipation.
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IGBT
650 V High-Speed IGBT for Inverter Applications
IGBT  from Renesas Electronics

The RJP65S08DWA-80#W0 from Renesas is an IGBT that is ideal for inverter applications. It has a collector-emitter voltage of up to 650 V, a gate-emitter voltage of ±30 V, and a saturated collector-emitter voltage of 1.5 V. This IGBT has a collector current of up to 400 A and a gate-emitter leakage current of ±1 µA. It has a high switching speed and can withstand short-circuit current surges for over 10 µs. This IGBT is available in a wafer package that measures 10.6 x 10.6 mm.
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