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New Power Electronics Products this Week - 27 December 2024

27 December 2024 Newsletter - everything PE

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Weekly Edition
Date: 27 December 2024
 
Sponsored by European Automotive E/E Systems Summit 2025
 
 
Featured Products this Week
DC to DC Converter
Automotive-Grade Flyback DC-DC Converters
DC to DC Converter  from Power Integrations

The InnoSwitch3-AQ Series from Power Integrations are AEC-Q100-Qualified Flyback DC-DC Converters that are designed for automotive applications. These converters convert an input voltage of 30-1200 V to an output voltage of 30-800 V. They deliver an output power of up to 100 W and have an efficiency of less than 95%. These converters incorporate multi-mode valley switching DCM (discontinuous-conduction mode)/ CCM (continuous-conduction mode).
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GaN Power Transistor
650 V GaN Transistor
GaN Power Transistor  from Infineon Technologies

The IGT65R035D2 from Infineon Technologies is an Enhancement Mode GaN Transistor that is ideal for telecom, datacenter SMPS-based on half-bridge hard and soft switching topologies such as totem pole PFC and high-frequency LLC, chargers, adapters, and industrial applications. It has a drain-source voltage of up to 650 V, a gate threshold voltage of 1.2 V, and a drain-source on-resistance of 35 milli-ohms.
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MOSFET
100 V N-Channel Split Gate Trench MOSFET
MOSFET  from Micro Commercial Components

The MCTL2D0N10YHR is an N-Channel Split Gate Trench MOSFET that is designed for motor drives, power supply units, DC-DC converters, and battery management systems. It has a drain-source voltage of 100 V, a gate threshold voltage of 3 V, and a drain-source on-resistance of 2.0 milli-ohms. This MOSFET offers a wide Safe Operating Area (SOA) that ensures robust operation even under extreme conditions. It has a high-density cell design.
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Featured Interview
Featured Interview
Interview with Venkatesh Shan from Lumissil Microsystems
everything PE recently interviewed Venkatesh Shan, Vice President of Marketing, at Lumissil Microsystems. Lumissil Microsystems specializes in designing and manufacturing advanced analog and mixed-signal semiconductor products.Click here to learn more.
Power Resistor
AEC-Q200-Qualified Thin Film Power Resistor
Power Resistor  from Vishay

The MMA 0204 from Vishay is an Automotive-Qualified Thin Film Power Resistor. This resistor has a resistance of 10 Ω-5.11 MΩ and a resistance tolerance of ±0.1%. It has a power rating of 0.25 W. This AEC-Q200-qualified resistor employs advanced metal film technology that provides minimal drift over time and under varying conditions. It is designed with intrinsic sulfur resistance and is IECQ-CECC approved. This RoHS-compliant resistor is available in a surface-mount package.
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Power Diode
AEC-Q101-Qualified Asymmetric TVS Diode
Power Diode  from Littelfuse

The TPSMB1505CA from Littelfuse is an AEC-Q101-Qualified Asymmetric TVS Diode that has been designed to protect automotive SiC MOSFET gate driver from overvoltage events. It has a breakdown voltage of 18.5 V and a maximum reverse leakage current of 1 µA. This AEC-Q101-qualified diode has a maximum clamping voltage of up to 24.6 V. It is designed to offer excellent clamping capability with low incremental surge resistance.
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Power Inductor
0.47 µH Magnetically Shielded Power Inductor
Power Inductor  from TDK Corporation

The PLE856CBAR47M-1PT00 from TDK Corporation is a Thin Film Power Inductor. It has an inductance of 0.47 µH and an inductance tolerance of ±20%. This inductor has a current rating of 0.72 A and a DCR of 180 milli-ohms. It utilizes thin-film processing techniques and metallic magnetic materials. This RoHS-compliant power inductor uses low-loss magnetic material that makes it possible to achieve low AC loss and provide a highly efficient power supply circuit.
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Sponsored by European Automotive E/E Systems Summit 2025
European Automotive E/E Systems Summit 2025
European Automotive E/E Systems Summit 2025
European Automotive E/E Systems Summit 2025 will provide insights into the current advancements in E/E architecture, shaping the future of AI integration and the overall transformation of the automotive sector. Making E/E architectures flexible enough to support future innovations is critical. Opportunities to leverage AI to create a safe, scalable and intelligent mobility ecosystem, opening up new possibilities for smart driving, predictive maintenance and enhanced user experience.Click here to learn more.
LED Driver IC
4-Channel Current Source Boost LED Driver
LED Driver IC  from Diodes Incorporated

The AL3069 from Diodes Incorporated is a Current Source Boost LED Driver Controller that has been designed with four-channel current sinks for LED backlight applications. It requires an input voltage of 4.5-60 V. This LED driver has a switching frequency from 100 kHz-1 MHz. It allows the output current for each of its four channels to be programmed from 20 mA to 400 mA using an external resistor. This LED driver supports direct pulse width modulation (PWM) dimming and PWM to analog dimming.
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Current Transducer
Automotive Grade Contactless Current Sensors
Current Transducer  from Allegro MicroSystems

The CT455 Series from Allegro Microsystems are Automotive-Qualified Contactless Current Sensors that are designed to perform high-accuracy current measurements for many consumer, enterprise, and industrial applications. They require supply voltages from 3.3 - 5 V and an input current of 6 mA. These AEC-Q100 Grade 1-qualified current sensors utilize Allegro's patented XtremeSense tunnel magnetoresistance (TMR) technology that minimizes noise.
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AC to DC Converter
Single-Channel DC-DC Converter IC
AC to DC Converter  from ROHM Semiconductor

The BD28C55FJ-LBE2 from ROHM Semiconductor is a Single-Channel DC-DC Converter IC that converts an input voltage of 6.9-28 V to an output voltage of up to 28 V. It requires an input current of 1.1 mA. This converter consists of voltage reference good logic, pulse width modulation (PWM) control, error amplifiers, comparators, counter skip function, flip-flop, oscillator, resistors, and built-in MOSFETs. It has been designed for the industrial equipment market.
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Sponsored by European Automotive E/E Systems Summit 2025
 
 
MOSFET
150 V Rad-Hard N-Channel Power MOSFET
MOSFET  from Infineon Technologies

The BUP15CN060L-01 from Infineon Technologies is a Radiation N-channel Power MOSFET that has been designed for space and radiation-prone environments. It has a drain-source voltage of less than 150 V, a gate threshold voltage of up to 4 V, and a drain-source on-resistance of 60 milli-ohms. This AEC-Q101-qualified MOSFET is equipped with single event effect (SEE) tolerance and total ionization dose (TID) tolerance, with approval for up to 30 kRad.
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